Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots: Dephasing mechanisms

Joanna M. Zajac, Sigurður Ingi Erlingsson

Rannsóknarafurð: Framlag til fræðitímaritsGreinritrýni

4 Tilvitnanir (Scopus)

Útdráttur

We report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We combined spectral and temporal measurements in order to identify sources of dephasing. In the spectral domain, we observed temperature-dependent broadening of the zero-phonon line as 0.3μeV/K, and a temperature-dependent phonon broadband. Time-resolved autocorrelation measurements revealed temperature-dependent spin pumping times between T1,s=6 ns (4 K) and 0.5 ns (15 K). These results are compared against theoretical modeling with a master equation for a four-level system coupled to phonon and spin baths. We explained the results by phonon-mediated hole-spin scattering between two excited states, with the piezophonons as a dominant mechanism.
Upprunalegt tungumálEnska
Síður (frá-til)035432/1-035432/7
FræðitímaritPhysical Review B
Bindi94
Númer tölublaðs3
DOI
ÚtgáfustaðaÚtgefið - 20 júl. 2016

Önnur efnisorð

  • Fluorescence
  • Thermal properties
  • Interferometry
  • Flúrljómun
  • Varmafræði
  • Mælitæki
  • Quantom dots

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