Structural and electrical characterization of V2O3on various substrates: A comparative study

M. T. Sultan, K. Ignatova, U. B. Arnalds

Rannsóknarafurð: Kafli í bók/skýrslu/ráðstefnuritiRáðstefnuframlagritrýni

Útdráttur

We investigate the structural morphology and electrical characteristics i.e., metal-insulator transition (MIT) of V2O3 thin films grown by high power impulse magnetron sputtering on Al2O3(c, r, m and a-plane), Si/SiO2 and Si/ SiO2 /TiO2. The MIT characteristics of films were linked to strain induced by substrate, growth temperature, the O2 flow settings, the lattice parameters of grown films and the stoichiometry. Of the studied substrates, films grown on c-plane Al2O3 and SiO2 showed a dominant abrupt transition with a strong MIT. Tunning the electrical transition characteristics of films grown on r-plane reveals MIT characteristics at high growth temperatures at remarkably low O2 flow settings compared to films grown on c-plane substrates.

Upprunalegt tungumálEnska
Titill gistiútgáfu2021 International Semiconductor Conference, CAS 2021
ÚtgefandiInstitute of Electrical and Electronics Engineers Inc.
Síður143-146
Síðufjöldi4
ISBN-númer (rafrænt)9781665435710
DOI
ÚtgáfustaðaÚtgefið - 2021
Viðburður44th International Semiconductor Conference, CAS 2021 - Virtual, Online, Rúmenía
Tímalengd: 6 okt. 20218 okt. 2021

Ritröð

NafnProceedings of the International Semiconductor Conference, CAS
Bindi2021-October

Ráðstefna

Ráðstefna44th International Semiconductor Conference, CAS 2021
Land/YfirráðasvæðiRúmenía
Borg/bærVirtual, Online
Tímabil6/10/218/10/21

Athugasemd

Funding Information:
Acknowledgment-This work is funded by

Publisher Copyright:
© 2021 IEEE.

Fingerprint

Sökktu þér í rannsóknarefni „Structural and electrical characterization of V2O3on various substrates: A comparative study“. Saman myndar þetta einstakt fingrafar.

Vitna í þetta