Spin interference in silicon one-dimensional rings

Nikolay T. Bagraev, Nikolay G. Galkin, Wolfgang Gehlhoff, Leonid E. Klyachkin, Anna M. Malyarenko, Ivan A. Shelykh

Rannsóknarafurð: Framlag til fræðitímaritsGreinritrýni

10 Tilvitnanir (Scopus)


We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (1 0 0) surface using the planar diffusion CVD technology. The coherence and phase sensitivity of spin-dependent transport of holes are studied by varying the value of external magnetic field and gate voltage that are perpendicular to the plane of the double-slit ring. Firstly, quantum scatterers connected to two one-dimensional leads and quantum point contact inserted in the one of the arms of the double-slit ring are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations. Secondly, the amplitude and phase sensitivity of the 0.7 (2e2/h) feature of hole quantum conductance staircase revealed by the quantum point contact inserted are found to result from the interplay of spontaneous spin polarization and Rashba spin-orbit interaction.

Upprunalegt tungumálEnska
Síður (frá-til)894-895
FræðitímaritPhysica B: Condensed Matter
Númer tölublaðsSPEC. ISS.
ÚtgáfustaðaÚtgefið - 1 maí 2006


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