Role of electron scattering in the magnetization relaxation of thin (formula presented) films

S. Ingvarsson, L. Ritchie, X. Y. Liu, Gang Xiao, J. C. Slonczewski, P. L. Trouilloud, R. H. Koch

Rannsóknarafurð: Framlag til fræðitímaritsGreinritrýni

Útdráttur

We observe a strong correlation between magnetization relaxation and electrical resistivity in thin Permalloy (formula presented) “Py”) films. Electron scattering rates in the films were affected by varying film thickness and deposition conditions. This shows that the magnetization relaxation mechanism is analogous to “bulk” relaxation, where phonon scattering in bulk is replaced by surface and defect scattering in thin films. Another interesting finding is the increased magnetization damping with Pt layers adjacent to the Py films. This is attributed to the strong spin-orbit coupling in Pt, resulting in spin-flip scattering of electrons that enter from the Py.

Upprunalegt tungumálEnska
Síður (frá-til)1-5
Síðufjöldi5
FræðitímaritPhysical Review B - Condensed Matter and Materials Physics
Bindi66
Númer tölublaðs21
DOI
ÚtgáfustaðaÚtgefið - 2002

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