Ionized physical vapor deposition (IPVD): A review of technology and applications

Ulf Helmersson, Martina Lattemann, Johan Bohlmark, Arutiun P. Ehiasarian, Jon Tomas Gudmundsson

Rannsóknarafurð: Framlag til fræðitímaritsYfirlitsgreinritrýni

744 Tilvitnanir (Scopus)


In plasma-based deposition processing, the importance of low-energy ion bombardment during thin film growth can hardly be exaggerated. Ion bombardment is an important physical tool available to materials scientists in the design of new materials and new structures. Glow discharges and in particular, the magnetron sputtering discharge have the advantage that the ions of the discharge are abundantly available to the deposition process. However, the ion chemistry is usually dominated by the ions of the inert sputtering gas while ions of the sputtered material are rare. Over the last few years, various ionized sputtering techniques have appeared that can achieve a high degree of ionization of the sputtered atoms, often up to 50% but in some cases as much as approximately 90%. This opens a complete new perspective in the engineering and design of new thin film materials. The development and application of magnetron sputtering systems for ionized physical vapor deposition (IPVD) is reviewed. The application of a secondary discharge, inductively coupled plasma magnetron sputtering (ICP-MS) and microwave amplified magnetron sputtering, is discussed as well as the high power impulse magnetron sputtering (HIPIMS), the self-sustained sputtering (SSS) magnetron, and the hollow cathode magnetron (HCM) sputtering discharges. Furthermore, filtered arc-deposition is discussed due to its importance as an IPVD technique. Examples of the importance of the IPVD-techniques for growth of thin films with improved adhesion, improved microstructures, improved coverage of complex shaped substrates, and increased reactivity with higher deposition rate in reactive processes are reviewed.

Upprunalegt tungumálEnska
Síður (frá-til)1-24
FræðitímaritThin Solid Films
Númer tölublaðs1-2
ÚtgáfustaðaÚtgefið - 14 ágú. 2006


Funding Information:
The authors gratefully acknowledge Prof. P. Hovsepian, Sheffield Hallam University, Prof. I. Petrov, University of Illinois, Dr. A. Anders, Lawrence Berkeley National Laboratory, Dr J. Alami, presently at RWTH Aachen, and K. B. Gylfason, presently at KTH Stockholm for useful discussions and the Swedish Research Council, the Swedish Foundation for Strategic Research, the Icelandic Research Fund, and the University of Iceland Research Fund for financial support during the course of this work.


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