Hydrogenation of polysilicon thin-film transistor in a planar inductive H2/Ar discharge

Ching Fa Yeh, Tai Ju Chen, Chung Liu, Jon T. Gudmundsson, Michael A. Lieberman

Rannsóknarafurð: Framlag til fræðitímaritsGreinritrýni

27 Tilvitnanir (Scopus)

Útdráttur

A planar inductive discharge is used to hydrogenate polysilicon thin-film transistors (poly-Si TFT's). Experimental results indicate that inductive discharges operate at higher plasma densities, thereby capable of shortening the hydrogenation time. In addition, to promote the ionization of hydrogen, Ar gas is also introduced to H2 plasma during hydrogenation. Furthermore, we discuss the mechanism of Ar enhanced hydrogenation and the characteristics of H2/Ar mixed plasma. Moreover, the post-hydrogenation anneal is utilized to further enhance passivation efficiency and improve the reliability of poly-Si TFT's.

Upprunalegt tungumálEnska
Síður (frá-til)223-225
Síðufjöldi3
FræðitímaritIEEE Electron Device Letters
Bindi20
Númer tölublaðs5
DOI
ÚtgáfustaðaÚtgefið - maí 1999

Athugasemd

Funding Information:
Manuscript received March 24, 1998; revised December 22, 1998. This work was supported by the National Science Council of the Republic of China under Contract NSC 87-2215-E-009-048. C.-F. Yeh, T.-J. Chen, and C. Liu are with the Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan, R.O.C. J. T. Gudmundsson is with the Science Institute, University of Iceland, IS-107 Reykjavik, Iceland. M. A. Lieberman is with the Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720 USA. Publisher Item Identifier S 0741-3106(99)04414-6.

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