Electronic properties of an electron-attractive complex neutral defect in GaAs

B. Monemar, H. P. Gislason, W. M. Chen, Z. G. Wang

Rannsóknarafurð: Framlag til fræðitímaritsGreinritrýni

12 Tilvitnanir (Scopus)

Útdráttur

This Rapid Communication reports the first detailed optical study of a complex neutral defect in GaAs (probably CuGa-AsGa), binding an exciton at 1.429 eV. Zeeman data at 10 T for the bound exciton are analyzed in detail, considering both the electron-hole exchange interaction and the local strain field. The defect has an electron-attractive local potential and a tensional local strain field. The g value for the deeply bound electron ge=0.9 is strongly modified from the value ge=-0.46 for a shallow donor, while the bound hole remains effective-mass-like.

Upprunalegt tungumálEnska
Síður (frá-til)4424-4427
Síðufjöldi4
FræðitímaritPhysical Review B
Bindi33
Númer tölublaðs6
DOI
ÚtgáfustaðaÚtgefið - 1986

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