Vacancy Defects as Compensating Centers in Mg-Doped GaN

S. Hautakangas, J. Oila, M. Alatalo, K. Saarinen, L. Liszkay*, D. Seghier, H. P. Gislason

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We apply positron annihilation spectroscopy to identify [Formula presented] complexes as native defects in Mg-doped GaN. These defects dissociate in postgrowth annealings at [Formula presented]. We conclude that [Formula presented] complexes contribute to the electrical compensation of Mg as well as the activation of [Formula presented]-type conductivity in the annealing. The observation of [Formula presented] complexes confirms that vacancy defects in either the N or Ga sublattice are abundant in GaN at any position of the Fermi level during growth, as predicted previously by theoretical calculations.

Original languageEnglish
Pages (from-to)4
Number of pages1
JournalPhysical Review Letters
Volume90
Issue number13
DOIs
Publication statusPublished - 2003

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