Transformation of gold in n-type silicon from a deep level to the gold acceptor level

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	501-505
Journal	Defect Engineering in Semiconductor Growth, Processing and Device Technology
DOIs	https://doi.org/10.1557/PROC-262-501
Publication status	Published - 1992

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@article{3b2a134c22b842298557f6ece87c958e,

title = "Transformation of gold in n-type silicon from a deep level to the gold acceptor level",

author = "Sveinbj{\"o}rnsson, {Einar {\"O}rn} and Olof Engstr{\"o}m",

year = "1992",

doi = "https://doi.org/10.1557/PROC-262-501",

language = "English",

pages = "501--505",

journal = "Defect Engineering in Semiconductor Growth, Processing and Device Technology",

}

TY - JOUR

T1 - Transformation of gold in n-type silicon from a deep level to the gold acceptor level

AU - Sveinbjörnsson, Einar Örn

AU - Engström, Olof

PY - 1992

Y1 - 1992

U2 - https://doi.org/10.1557/PROC-262-501

DO - https://doi.org/10.1557/PROC-262-501

M3 - Article

SP - 501

EP - 505

JO - Defect Engineering in Semiconductor Growth, Processing and Device Technology

JF - Defect Engineering in Semiconductor Growth, Processing and Device Technology

ER -