Thermal and electrical behavior of Cu-related acceptors in Li- and H-passivated GaAs

K. Leosson, H. P. Gislason*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We present evidence from current transient spectroscopy which strongly indicates a non-correlation between the well known CuA and CuB levels in GaAs, situated at 0.15eV and 0.44eV above the valence band, respectively. The fact that both levels are passivated following the introduction of lithium or hydrogen has been previously established. After reverse-bias annealing at moderate annealing temperatures CuB is reactivated independent of CuA . The reactivation is shown to follow an Arrhenius relationship with a thermal activation energy around 1.30eV for both passivating species. In partially Li-passivated material, a new level is introduced at 0.12eV above the valence band. This level is passivated by further introduction of Li and reactivated during reverse-bias annealing with a characteristic activation energy of 1.11 eV. We speculate that CuA might be due to a double CuGa acceptor which is singly or doubly passivated by Li and doubly passivated by hydrogen under the diffusion conditions of this work while CuB arises from a different defect. Although only one ionization level of the double acceptor is observed, this interpretation is consistent with results previously presented in the literature.

Original languageEnglish
Pages (from-to)196-201
Number of pages6
JournalPhysica Scripta T
Volume69
DOIs
Publication statusPublished - 1997

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