Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching

E. Fakhri; M. T. Sultan; A. Manolescu; S. Ingvarsson; N. Plugaru; R. Plugaru; H. G. Svavarsson

doi:10.1109/CAS52836.2021.9604178

Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching

E. Fakhri, M. T. Sultan, A. Manolescu, S. Ingvarsson, N. Plugaru, R. Plugaru, H. G. Svavarsson

University of Iceland, Iceland, Reykjavik University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

Silicon nanowires (SiNWs) hold potential applications in optoelectronics and SiNW-based optical sensors. Here, a photoluminescence study of SiNW arrays fabricated with a simple two-step silver (Ag) catalyzed etching of silicon wafers is presented. The morphology and photoluminescence properties were investigated for SiNWs of different lengths obtained by varying Ag concentration (as silver nitrate, AgNO3) and etching time. The samples consist of vertically aligned SiNWs with length in the range ~10-40 μm. Our foremost result is that the photoluminescence intensity from the SiNW arrays is an order of magnitude higher than that from bulk Si. This is accompanied by a red-shift in the peak position of approximately 0.09 eV, which may be attributed either to the variation in size of the Ag-nanoparticles created during the etching process or different lengths of the SiNWs. The results indicate that SiNWs obtained by simple and cost-effective metal catalyzed etching, are potentially promising for optoelectronic applications.

Original language	English
Title of host publication	2021 International Semiconductor Conference, CAS 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	147-150
Number of pages	4
ISBN (Electronic)	9781665435710
DOIs	https://doi.org/10.1109/CAS52836.2021.9604178
Publication status	Published - 2021
Event	44th International Semiconductor Conference, CAS 2021 - Virtual, Online, Romania Duration: 6 Oct 2021 → 8 Oct 2021

Publication series

Name	Proceedings of the International Semiconductor Conference, CAS
Volume	2021-October

Conference

Conference	44th International Semiconductor Conference, CAS 2021
Country/Territory	Romania
City	Virtual, Online
Period	6/10/21 → 8/10/21

Bibliographical note

Funding Information:
This work is partially funded by Reykjavik University Ph.D. fund no. 220006 and the Icelandic Research Fund Grants no. 218029-051. RP acknowledges support from the Core program 14N/2019 MICRO-NANO-SIS PLUS.

Publisher Copyright:
© 2021 IEEE.

Other keywords

MACE
optoelectonics
photoluminescence
SEM
Si-nanowire arrays

Access to Document

10.1109/CAS52836.2021.9604178

Cite this

Fakhri, E., Sultan, M. T., Manolescu, A., Ingvarsson, S., Plugaru, N., Plugaru, R., & Svavarsson, H. G. (2021). Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching. In 2021 International Semiconductor Conference, CAS 2021 (pp. 147-150). (Proceedings of the International Semiconductor Conference, CAS; Vol. 2021-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CAS52836.2021.9604178

@inproceedings{d878b8a026354b28b65a0c7fad76d43c,

title = "Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching",

abstract = "Silicon nanowires (SiNWs) hold potential applications in optoelectronics and SiNW-based optical sensors. Here, a photoluminescence study of SiNW arrays fabricated with a simple two-step silver (Ag) catalyzed etching of silicon wafers is presented. The morphology and photoluminescence properties were investigated for SiNWs of different lengths obtained by varying Ag concentration (as silver nitrate, AgNO3) and etching time. The samples consist of vertically aligned SiNWs with length in the range ~10-40 μm. Our foremost result is that the photoluminescence intensity from the SiNW arrays is an order of magnitude higher than that from bulk Si. This is accompanied by a red-shift in the peak position of approximately 0.09 eV, which may be attributed either to the variation in size of the Ag-nanoparticles created during the etching process or different lengths of the SiNWs. The results indicate that SiNWs obtained by simple and cost-effective metal catalyzed etching, are potentially promising for optoelectronic applications.",

keywords = "MACE, optoelectonics, photoluminescence, SEM, Si-nanowire arrays",

author = "E. Fakhri and Sultan, {M. T.} and A. Manolescu and S. Ingvarsson and N. Plugaru and R. Plugaru and Svavarsson, {H. G.}",

note = "Funding Information: This work is partially funded by Reykjavik University Ph.D. fund no. 220006 and the Icelandic Research Fund Grants no. 218029-051. RP acknowledges support from the Core program 14N/2019 MICRO-NANO-SIS PLUS. Publisher Copyright: {\textcopyright} 2021 IEEE.; 44th International Semiconductor Conference, CAS 2021 ; Conference date: 06-10-2021 Through 08-10-2021",

year = "2021",

doi = "10.1109/CAS52836.2021.9604178",

language = "English",

series = "Proceedings of the International Semiconductor Conference, CAS",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "147--150",

booktitle = "2021 International Semiconductor Conference, CAS 2021",

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Fakhri, E, Sultan, MT , Manolescu, A , Ingvarsson, S, Plugaru, N, Plugaru, R & Svavarsson, HG 2021, Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching. in 2021 International Semiconductor Conference, CAS 2021. Proceedings of the International Semiconductor Conference, CAS, vol. 2021-October, Institute of Electrical and Electronics Engineers Inc., pp. 147-150, 44th International Semiconductor Conference, CAS 2021, Virtual, Online, Romania, 6/10/21. https://doi.org/10.1109/CAS52836.2021.9604178

Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching. / Fakhri, E.; Sultan, M. T.; Manolescu, A. et al.
2021 International Semiconductor Conference, CAS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 147-150 (Proceedings of the International Semiconductor Conference, CAS; Vol. 2021-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching

AU - Fakhri, E.

AU - Sultan, M. T.

AU - Manolescu, A.

AU - Ingvarsson, S.

AU - Plugaru, N.

AU - Plugaru, R.

AU - Svavarsson, H. G.

N1 - Funding Information: This work is partially funded by Reykjavik University Ph.D. fund no. 220006 and the Icelandic Research Fund Grants no. 218029-051. RP acknowledges support from the Core program 14N/2019 MICRO-NANO-SIS PLUS. Publisher Copyright: © 2021 IEEE.

PY - 2021

Y1 - 2021

N2 - Silicon nanowires (SiNWs) hold potential applications in optoelectronics and SiNW-based optical sensors. Here, a photoluminescence study of SiNW arrays fabricated with a simple two-step silver (Ag) catalyzed etching of silicon wafers is presented. The morphology and photoluminescence properties were investigated for SiNWs of different lengths obtained by varying Ag concentration (as silver nitrate, AgNO3) and etching time. The samples consist of vertically aligned SiNWs with length in the range ~10-40 μm. Our foremost result is that the photoluminescence intensity from the SiNW arrays is an order of magnitude higher than that from bulk Si. This is accompanied by a red-shift in the peak position of approximately 0.09 eV, which may be attributed either to the variation in size of the Ag-nanoparticles created during the etching process or different lengths of the SiNWs. The results indicate that SiNWs obtained by simple and cost-effective metal catalyzed etching, are potentially promising for optoelectronic applications.

AB - Silicon nanowires (SiNWs) hold potential applications in optoelectronics and SiNW-based optical sensors. Here, a photoluminescence study of SiNW arrays fabricated with a simple two-step silver (Ag) catalyzed etching of silicon wafers is presented. The morphology and photoluminescence properties were investigated for SiNWs of different lengths obtained by varying Ag concentration (as silver nitrate, AgNO3) and etching time. The samples consist of vertically aligned SiNWs with length in the range ~10-40 μm. Our foremost result is that the photoluminescence intensity from the SiNW arrays is an order of magnitude higher than that from bulk Si. This is accompanied by a red-shift in the peak position of approximately 0.09 eV, which may be attributed either to the variation in size of the Ag-nanoparticles created during the etching process or different lengths of the SiNWs. The results indicate that SiNWs obtained by simple and cost-effective metal catalyzed etching, are potentially promising for optoelectronic applications.

KW - MACE

KW - optoelectonics

KW - photoluminescence

KW - SEM

KW - Si-nanowire arrays

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U2 - 10.1109/CAS52836.2021.9604178

DO - 10.1109/CAS52836.2021.9604178

M3 - Conference contribution

AN - SCOPUS:85122984578

T3 - Proceedings of the International Semiconductor Conference, CAS

SP - 147

EP - 150

BT - 2021 International Semiconductor Conference, CAS 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 44th International Semiconductor Conference, CAS 2021

Y2 - 6 October 2021 through 8 October 2021

ER -

Fakhri E, Sultan MT , Manolescu A , Ingvarsson S, Plugaru N, Plugaru R et al. Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching. In 2021 International Semiconductor Conference, CAS 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 147-150. (Proceedings of the International Semiconductor Conference, CAS). doi: 10.1109/CAS52836.2021.9604178

Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching

Abstract

Publication series

Conference

Bibliographical note

Other keywords

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