Strong reduction in the density of interface states at the SiO 2/4H-SiC interface after oxidation in the presence of alkali ions

Pétur Gordon Hermannsson; Einar Ö Sveinbjörnsson

doi:10.1088/0031-8949/2012/T148/014004

Strong reduction in the density of interface states at the SiO ₂/4H-SiC interface after oxidation in the presence of alkali ions

Pétur Gordon Hermannsson^*, Einar Ö Sveinbjörnsson

^*Corresponding author for this work

Faculty of Physical Sciences

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We report a strong reduction in the density of near-interface traps at the SiO ₂/4H-SiC interface after dry oxidation in the presence of potassium. This is accompanied by a significant enhancement of the oxidation rate. The results are in line with recent investigations of the effect of sodium on oxidation of 4H-SiC. It is evident that the presence of such alkali metals enhances the oxidation rate of SiC and strongly influences the energy distribution of interface states.

Original language	English
Article number	014004
Journal	Physica Scripta
Issue number	T148
DOIs	https://doi.org/10.1088/0031-8949/2012/T148/014004
Publication status	Published - Mar 2012

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10.1088/0031-8949/2012/T148/014004

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title = "Strong reduction in the density of interface states at the SiO 2/4H-SiC interface after oxidation in the presence of alkali ions",

abstract = "We report a strong reduction in the density of near-interface traps at the SiO 2/4H-SiC interface after dry oxidation in the presence of potassium. This is accompanied by a significant enhancement of the oxidation rate. The results are in line with recent investigations of the effect of sodium on oxidation of 4H-SiC. It is evident that the presence of such alkali metals enhances the oxidation rate of SiC and strongly influences the energy distribution of interface states.",

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N2 - We report a strong reduction in the density of near-interface traps at the SiO 2/4H-SiC interface after dry oxidation in the presence of potassium. This is accompanied by a significant enhancement of the oxidation rate. The results are in line with recent investigations of the effect of sodium on oxidation of 4H-SiC. It is evident that the presence of such alkali metals enhances the oxidation rate of SiC and strongly influences the energy distribution of interface states.

AB - We report a strong reduction in the density of near-interface traps at the SiO 2/4H-SiC interface after dry oxidation in the presence of potassium. This is accompanied by a significant enhancement of the oxidation rate. The results are in line with recent investigations of the effect of sodium on oxidation of 4H-SiC. It is evident that the presence of such alkali metals enhances the oxidation rate of SiC and strongly influences the energy distribution of interface states.

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Strong reduction in the density of interface states at the SiO 2/4H-SiC interface after oxidation in the presence of alkali ions

Abstract

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Strong reduction in the density of interface states at the SiO ₂/4H-SiC interface after oxidation in the presence of alkali ions