Spin interference in silicon one-dimensional rings

Nikolay T. Bagraev*, Nikolay G. Galkin, Wolfgang Gehlhoff, Leonid E. Klyachkin, Anna M. Malyarenko, Ivan A. Shelykh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (1 0 0) surface using the planar diffusion CVD technology. The coherence and phase sensitivity of spin-dependent transport of holes are studied by varying the value of external magnetic field and gate voltage that are perpendicular to the plane of the double-slit ring. Firstly, quantum scatterers connected to two one-dimensional leads and quantum point contact inserted in the one of the arms of the double-slit ring are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations. Secondly, the amplitude and phase sensitivity of the 0.7 (2e2/h) feature of hole quantum conductance staircase revealed by the quantum point contact inserted are found to result from the interplay of spontaneous spin polarization and Rashba spin-orbit interaction.

Original languageEnglish
Pages (from-to)894-895
Number of pages2
JournalPhysica B: Condensed Matter
Issue numberSPEC. ISS.
Publication statusPublished - 1 May 2006

Other keywords

  • Aharonov-Bohm double-slit ring
  • Self-assembled silicon quantum wells
  • Spin interference
  • Spin-orbit interaction


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