TY - JOUR
T1 - Spin interference in silicon one-dimensional rings
AU - Bagraev, Nikolay T.
AU - Galkin, Nikolay G.
AU - Gehlhoff, Wolfgang
AU - Klyachkin, Leonid E.
AU - Malyarenko, Anna M.
AU - Shelykh, Ivan A.
PY - 2006/5/1
Y1 - 2006/5/1
N2 - We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (1 0 0) surface using the planar diffusion CVD technology. The coherence and phase sensitivity of spin-dependent transport of holes are studied by varying the value of external magnetic field and gate voltage that are perpendicular to the plane of the double-slit ring. Firstly, quantum scatterers connected to two one-dimensional leads and quantum point contact inserted in the one of the arms of the double-slit ring are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations. Secondly, the amplitude and phase sensitivity of the 0.7 (2e2/h) feature of hole quantum conductance staircase revealed by the quantum point contact inserted are found to result from the interplay of spontaneous spin polarization and Rashba spin-orbit interaction.
AB - We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (1 0 0) surface using the planar diffusion CVD technology. The coherence and phase sensitivity of spin-dependent transport of holes are studied by varying the value of external magnetic field and gate voltage that are perpendicular to the plane of the double-slit ring. Firstly, quantum scatterers connected to two one-dimensional leads and quantum point contact inserted in the one of the arms of the double-slit ring are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations. Secondly, the amplitude and phase sensitivity of the 0.7 (2e2/h) feature of hole quantum conductance staircase revealed by the quantum point contact inserted are found to result from the interplay of spontaneous spin polarization and Rashba spin-orbit interaction.
KW - Aharonov-Bohm double-slit ring
KW - Self-assembled silicon quantum wells
KW - Spin interference
KW - Spin-orbit interaction
UR - http://www.scopus.com/inward/record.url?scp=33646425315&partnerID=8YFLogxK
U2 - 10.1016/j.physb.2006.01.330
DO - 10.1016/j.physb.2006.01.330
M3 - Article
AN - SCOPUS:33646425315
SN - 0921-4526
VL - 378-380
SP - 894
EP - 895
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - SPEC. ISS.
ER -