Similarities in the electrical properties of transition metal-hydrogen complexes in silicon

J. U. Sachse*, E. Ö Sveinbjörnsson, N. Yarykin, J. Weber

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

52 Citations (Scopus)

Abstract

We review our recent studies on the reactions of hydrogen with transition-metals (Pd, Pt, Ag, and Au) in crystalline Si. Hydrogen was incorporated into the samples by wet-chemical etching. Deep-level transient spectroscopy (DLTS) on Schottky diodes reveals several transition metal-hydrogen complexes in n- and p-type samples. From DLTS profiling, we are able to estimate the number i of hydrogen atoms in the TM-Hi complexes. All complexes with i = 1, 2 are electrically active. Striking similarities are found for isoelectronic complexes, e.g. Pt-H2 and Au-H1. Transition metal complexes with more than three hydrogen atoms are likely to be electrically passive. All hydrogen related complexes disappear after heat treatments above 600 K for several hours.

Original languageEnglish
Pages (from-to)134-140
Number of pages7
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume58
Issue number1
DOIs
Publication statusPublished - 12 Feb 1999

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