Room temperature electroluminescence from dislocation-rich silicon

Einar Ö Sveinbjörnsson*, Jörg Weber

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

115 Citations (Scopus)


We report on electroluminescence at room temperature from forward biased n+ - p silicon diodes containing high densities (108-109 cm-2) of dislocations at the junction interface. In addition to electroluminescence from band-to-band transitions, we observe a signal with a comparable intensity peaked at ∼1.6 μm (0.78 eV). From luminescence studies below room temperature we deduce that the 1.6 μm emission originates from the well known dislocation-related center D1. The D1 electroluminescence intensity at room temperature increases linearly with current density with no observable saturation. The external efficiency of the D1 electroluminescence at room temperature was estimated to be of the order 10-6.

Original languageEnglish
Pages (from-to)2686-2688
Number of pages3
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 28 Oct 1996


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