Abstract
We demonstrate that the electronic, thermal, and optical properties of a graphene bilayer with boron and nitrogen dopant atoms can be controlled by the interlayer distance between the layers in which the interaction energy and the van der Waals interaction between the dopant atoms play an essential role. We find a conversion of an AA-to an AB-stacked bilayer graphene caused by the repulsive interaction between dopant atoms. At a short interlayer distance, a strong repulsive interaction inducing a strong electric dipole moment of the dopant atoms is found. This gives rise to a breaking of the high symmetry, opening up a bandgap. Consequently, a considerable change in thermoelectric properties such as the Seebeck coefficient and the figure of merit are seen. The repulsive interaction is reduced by increasing the interlayer distance, and at a large interlayer distance the conversion process of the stacking order vanishes. A small bandgap is found leading to a low Seebeck coefficient and a figure of merit. For both short and large interlayer distances, a prominent peak in the optical response is found in the visible range and the peak position is inversely proportional to the interlayer distance.
Original language | English |
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Article number | 110095 |
Journal | Journal of Physics and Chemistry of Solids |
Volume | 155 |
DOIs | |
Publication status | Published - Aug 2021 |
Bibliographical note
Funding Information:This work was financially supported by the University of Sulaimani and the Research center of Komar University of Science and Technology. The computations were performed on resources provided by the Division of Computational Nanoscience at the University of Sulaimani . C.-S.T. acknowledges financial support from Ministry of Science and Technology in Taiwan under grant No. MOST 109-2112-M-239-003 .
Publisher Copyright:
© 2021 Elsevier Ltd
Other keywords
- Bilayer graphene
- DFT
- Electronic structure, and optical properties
- Thermoelectric