Quantum transport in p-type narrow channel with DC-biased double finger gate

Wei An Chen; Quoc Hung Phan; Chi Shung Tang; Nzar Rauf Abdullah; Vidar Gudmundsson

doi:10.1016/j.physleta.2022.128140

Quantum transport in p-type narrow channel with DC-biased double finger gate

Wei An Chen, Quoc Hung Phan, Chi Shung Tang^*, Nzar Rauf Abdullah, Vidar Gudmundsson

^*Corresponding author for this work

Faculty of Physical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

The quantum transport in a p-type narrow channel device with a DC-biased double finger gate is investigated using a Luttinger four-band Hamiltonian and a propagation matrix approach. The results show that when the potential energy modulation effect produced by the finger gate is large, the quantum transport shows a resonance behavior indicative of large barriers in a double-barrier system. A simple analytical method based on an ideal resonant square quantum well approximation is used to predict the energies of the resonance peaks contributed by the light and heavy holes. The results show that the first conductance peak is formed at 2e²/h and is contributed by the heavy holes. A second conductance resonance peak is formed at 3e²/h due to the semi-reflection of the heavy holes and resonant transmission of the light holes. Finally, a third conductance resonance peak is formed at 4e²/h as a result of the concurrent resonant transmission of the light holes and heavy holes.

Original language	English
Article number	128140
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	439
DOIs	https://doi.org/10.1016/j.physleta.2022.128140
Publication status	Published - 1 Apr 2022

Bibliographical note

Funding Information:
This work was supported by the Ministry of Science and Technology in Taiwan through Contract No. 109-2112-M-239-003 . The authors acknowledge technical assistance from Hao-Xun Xu.

Publisher Copyright:
© 2022 Elsevier B.V.

Other keywords

Double finger gate
p-type device
Quantum transport
Resonant transmission

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10.1016/j.physleta.2022.128140

Cite this

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title = "Quantum transport in p-type narrow channel with DC-biased double finger gate",

abstract = "The quantum transport in a p-type narrow channel device with a DC-biased double finger gate is investigated using a Luttinger four-band Hamiltonian and a propagation matrix approach. The results show that when the potential energy modulation effect produced by the finger gate is large, the quantum transport shows a resonance behavior indicative of large barriers in a double-barrier system. A simple analytical method based on an ideal resonant square quantum well approximation is used to predict the energies of the resonance peaks contributed by the light and heavy holes. The results show that the first conductance peak is formed at 2e2/h and is contributed by the heavy holes. A second conductance resonance peak is formed at 3e2/h due to the semi-reflection of the heavy holes and resonant transmission of the light holes. Finally, a third conductance resonance peak is formed at 4e2/h as a result of the concurrent resonant transmission of the light holes and heavy holes.",

keywords = "Double finger gate, p-type device, Quantum transport, Resonant transmission",

author = "Chen, {Wei An} and Phan, {Quoc Hung} and Tang, {Chi Shung} and Abdullah, {Nzar Rauf} and Vidar Gudmundsson",

note = "Funding Information: This work was supported by the Ministry of Science and Technology in Taiwan through Contract No. 109-2112-M-239-003 . The authors acknowledge technical assistance from Hao-Xun Xu. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

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doi = "10.1016/j.physleta.2022.128140",

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AU - Chen, Wei An

AU - Phan, Quoc Hung

AU - Tang, Chi Shung

AU - Abdullah, Nzar Rauf

AU - Gudmundsson, Vidar

N1 - Funding Information: This work was supported by the Ministry of Science and Technology in Taiwan through Contract No. 109-2112-M-239-003 . The authors acknowledge technical assistance from Hao-Xun Xu. Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/4/1

Y1 - 2022/4/1

N2 - The quantum transport in a p-type narrow channel device with a DC-biased double finger gate is investigated using a Luttinger four-band Hamiltonian and a propagation matrix approach. The results show that when the potential energy modulation effect produced by the finger gate is large, the quantum transport shows a resonance behavior indicative of large barriers in a double-barrier system. A simple analytical method based on an ideal resonant square quantum well approximation is used to predict the energies of the resonance peaks contributed by the light and heavy holes. The results show that the first conductance peak is formed at 2e2/h and is contributed by the heavy holes. A second conductance resonance peak is formed at 3e2/h due to the semi-reflection of the heavy holes and resonant transmission of the light holes. Finally, a third conductance resonance peak is formed at 4e2/h as a result of the concurrent resonant transmission of the light holes and heavy holes.

AB - The quantum transport in a p-type narrow channel device with a DC-biased double finger gate is investigated using a Luttinger four-band Hamiltonian and a propagation matrix approach. The results show that when the potential energy modulation effect produced by the finger gate is large, the quantum transport shows a resonance behavior indicative of large barriers in a double-barrier system. A simple analytical method based on an ideal resonant square quantum well approximation is used to predict the energies of the resonance peaks contributed by the light and heavy holes. The results show that the first conductance peak is formed at 2e2/h and is contributed by the heavy holes. A second conductance resonance peak is formed at 3e2/h due to the semi-reflection of the heavy holes and resonant transmission of the light holes. Finally, a third conductance resonance peak is formed at 4e2/h as a result of the concurrent resonant transmission of the light holes and heavy holes.

KW - Double finger gate

KW - p-type device

KW - Quantum transport

KW - Resonant transmission

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JO - Physics Letters, Section A: General, Atomic and Solid State Physics

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ER -

Quantum transport in p-type narrow channel with DC-biased double finger gate

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