Quantum Rings Dressed by a High-Frequency Electromagnetic Field

O. V. Kibis; V. K. Kozin; I. V. Iorsh; I. A. Shelykh

doi:10.1134/S1063782618140130

Quantum Rings Dressed by a High-Frequency Electromagnetic Field

O. V. Kibis^*, V. K. Kozin, I. V. Iorsh, I. A. Shelykh

^*Corresponding author for this work

Faculty of Physical Sciences

University of Iceland, Iceland

Research output: Contribution to journal › Article › peer-review

Abstract

Abstract: We demonstrate theoretically that the interaction of quantum rings with a high-frequency off-resonant electromagnetic field (dressing field) substantially renormalizes their electronic properties. Particularly, it is shown that a linearly polarized dressing field decreases the spin splitting arisen from the Rashba spin-orbit interaction, whereas a circularly polarized field splits electron states corresponding to mutually opposite directions of angular momentum. As a consequence, the dressing field can serve as an effective tool to control spin and transport characteristics of the quantum rings and be potentially exploited in optoelectronic applications.

Original language	English
Pages (from-to)	1806-1808
Number of pages	3
Journal	Semiconductors
Volume	52
Issue number	14
DOIs	https://doi.org/10.1134/S1063782618140130
Publication status	Published - 1 Dec 2018

Bibliographical note

Publisher Copyright:
© 2018, Pleiades Publishing, Ltd.

Access to Document

10.1134/S1063782618140130

Cite this

@article{83e17e055f4c413fa854eaed70f6bbb9,

title = "Quantum Rings Dressed by a High-Frequency Electromagnetic Field",

abstract = "Abstract: We demonstrate theoretically that the interaction of quantum rings with a high-frequency off-resonant electromagnetic field (dressing field) substantially renormalizes their electronic properties. Particularly, it is shown that a linearly polarized dressing field decreases the spin splitting arisen from the Rashba spin-orbit interaction, whereas a circularly polarized field splits electron states corresponding to mutually opposite directions of angular momentum. As a consequence, the dressing field can serve as an effective tool to control spin and transport characteristics of the quantum rings and be potentially exploited in optoelectronic applications.",

author = "Kibis, {O. V.} and Kozin, {V. K.} and Iorsh, {I. V.} and Shelykh, {I. A.}",

note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",

year = "2018",

month = dec,

day = "1",

doi = "10.1134/S1063782618140130",

language = "English",

volume = "52",

pages = "1806--1808",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "14",

}

TY - JOUR

T1 - Quantum Rings Dressed by a High-Frequency Electromagnetic Field

AU - Kibis, O. V.

AU - Kozin, V. K.

AU - Iorsh, I. V.

AU - Shelykh, I. A.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Abstract: We demonstrate theoretically that the interaction of quantum rings with a high-frequency off-resonant electromagnetic field (dressing field) substantially renormalizes their electronic properties. Particularly, it is shown that a linearly polarized dressing field decreases the spin splitting arisen from the Rashba spin-orbit interaction, whereas a circularly polarized field splits electron states corresponding to mutually opposite directions of angular momentum. As a consequence, the dressing field can serve as an effective tool to control spin and transport characteristics of the quantum rings and be potentially exploited in optoelectronic applications.

AB - Abstract: We demonstrate theoretically that the interaction of quantum rings with a high-frequency off-resonant electromagnetic field (dressing field) substantially renormalizes their electronic properties. Particularly, it is shown that a linearly polarized dressing field decreases the spin splitting arisen from the Rashba spin-orbit interaction, whereas a circularly polarized field splits electron states corresponding to mutually opposite directions of angular momentum. As a consequence, the dressing field can serve as an effective tool to control spin and transport characteristics of the quantum rings and be potentially exploited in optoelectronic applications.

UR - http://www.scopus.com/inward/record.url?scp=85059455528&partnerID=8YFLogxK

U2 - 10.1134/S1063782618140130

DO - 10.1134/S1063782618140130

M3 - Article

AN - SCOPUS:85059455528

SN - 1063-7826

VL - 52

SP - 1806

EP - 1808

JO - Semiconductors

JF - Semiconductors

IS - 14

ER -

Quantum Rings Dressed by a High-Frequency Electromagnetic Field

Abstract

Bibliographical note

Access to Document

Fingerprint

Cite this