Properties of GaN tunneling MIS light-emitting diodes

O. Lagerstedt*, B. Monemar, Hafliði Pétur Gíslason

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

MIS structures on GaN consisting of Au-NaI-GaN or Au-Al2O 3-GaN with insulator thickness <100 Å have been fabricated with the aim of producing light-emitting diodes with emission in the uv and blue spectral region at low bias. I-V characteristics are consistent with a tunneling carrier transport mechanism, and light emission typically occurs for voltages 2-3 V. The spectral behavior of electroluminescence (EL) is in good agreement with photoluminescence (PL) data in the uv and blue spectral region. Suggestions for further work to improve radiant power output from such devices are presented.

Original languageEnglish
Pages (from-to)2953-2957
Number of pages5
JournalJournal of Applied Physics
Volume49
Issue number5
DOIs
Publication statusPublished - 1978

Bibliographical note

Copyright 1978 American Institute of Physics

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