We report investigations of passivation of the gold center in silicon after hydrogen injection by wet chemical etching. Using deep level transient spectroscopy (DLTS) and capacitance-voltage (CV) profiling we find two separate hydrogen-gold complexes. One of the complexes named G is electrically active and has most likely three deep levels in the band gap. The other hydrogen-gold complex PA is electrically inactive (passive). Based on the annealing kinetics of these complexes we suggest that the G complex is a Au-H pair and the passive complex is Au-H2.