Proceedings of the 1995 E-MRS Spring Meeting

Einar O. Sveinbjornsson*, Olof Engstrom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review


We report investigations of passivation of the gold center in silicon after hydrogen injection by wet chemical etching. Using deep level transient spectroscopy (DLTS) and capacitance-voltage (CV) profiling we find two separate hydrogen-gold complexes. One of the complexes named G is electrically active and has most likely three deep levels in the band gap. The other hydrogen-gold complex PA is electrically inactive (passive). Based on the annealing kinetics of these complexes we suggest that the G complex is a Au-H pair and the passive complex is Au-H2.

Original languageEnglish
Title of host publicationSymposium N
Subtitle of host publicationCarbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors
PublisherElsevier Science S.A.
Publication statusPublished - Jan 1996

Publication series

NameMaterials science & engineering. B, Solid-state materials for advanced technology
ISSN (Print)0921-5107


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