Potential fluctuations and site switching in Si-doped GaAs studied by photoluminescence

H. G. Svavarsson*, J. T. Gudmundsson, G. I. Gudjonsson, H. P. Gislason

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We report on a photoluminescence (PL) study of highly compensated Si-doped GaAs. Si-doped GaAs layers were grown p-type at 700°C by liquid phase epitaxy and subsequently converted to n-type by thermal annealing at temperatures above a transition temperature of about 840°C. Annealing at temperatures close to the transition temperature resulted in a very high degree of compensation. This is verified by a large shift of photoluminescence bands with excitation intensity, up to 24 meV per decade of increase in the excitation power density. We attribute the shift to the presence of potential fluctuations which we correlate with a possible site-switching of Si from Ga sites to As sites. Our results strongly suggest that the type conversion from p-to n-type is in fact caused by site-switching of the Si impurity.

Original languageEnglish
Pages (from-to)114-118
Number of pages5
JournalPhysica Scripta T
Volume101
Publication statusPublished - 2002
EventProceedings of the 19th Nordic Semiconductor Meeting - Lyngby, Denmark
Duration: 20 May 200123 May 2001

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