Abstract
Nitrogen-doped p-type ZnSe grown by molecular beam epitaxy on p-type GaAs shows persistent photocurrent up to room temperature. A typical decay consists of an initial stretched-exponential transient with a thermally activated decay constant, and a subsequent long transient. We attribute the effect to metastable centers in the ZnSe near the interface to the GaAs substrate, on the one hand, and tunneling of photo-excited holes trapped in a two-dimensional quantum well at the heterojunction through the barrier to the ZnSe, on the other hand.
| Original language | English |
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| Pages | 313-316 |
| Number of pages | 4 |
| Publication status | Published - 1999 |
| Event | Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA Duration: 1 Jun 1998 → 5 Jun 1998 |
Conference
| Conference | Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) |
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| City | Berkeley, CA, USA |
| Period | 1/06/98 → 5/06/98 |