Optically detected magnetic resonance of nonradiative recombination via the AsGa antisite in p-type GaAs

Haflidi P. Gislason*, George D. Watkins

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Optically detected magnetic resonance of the AsGa antisite detected via photoluminescence is reported for the first time in p-type GaAs. The signals are observed as negative contributions to all photoluminescence bands down to 1.6 μm in p-type Zn-doped GaAs. The resonance spectrum is attributed to nonradiative recombination between the singly ionized AsGa +(D+) donor and shallow acceptors. The results suggest that the AsGa antisite provides an efficient nonradiative recombination channel in GaAs and underline the important role of antisite defects in nonradiative processes in III-V compound semiconductors.

Original languageEnglish
Pages (from-to)2957-2960
Number of pages4
JournalPhysical Review B
Volume33
Issue number4
DOIs
Publication statusPublished - 1986

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