On shallow interface states in n type 4H-SiC metal-oxide-semiconductor structures

H. Ólafsson; F. Allerstam; E. Sveinbjörnsson

doi:10.4028/www.scientific.net/MSF.389-393.1005

On shallow interface states in n type 4H-SiC metal-oxide-semiconductor structures

H. Ólafsson, F. Allerstam, E. Sveinbjörnsson

Faculty of Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

24 Citations (Scopus)

Abstract

We investigate the high density of shallow traps found at the 4H-SiC/SiO₂ interface near the SiC conduction band edge by using constant-capacitance/conventional deep level transient spectroscopy. We find both fast and slow interface states and we estimate their electron capture cross sections to be less than 10^-16 cm² and 10^-19 cm² respectively.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2001
Editors	S. Yoshida, S. Nishino, H. Harima, T. Kimoto
Publisher	Trans Tech Publications Ltd
Pages	1005-1008
Number of pages	4
ISBN (Print)	9780878498949
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.389-393.1005
Publication status	Published - 2002
Event	International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan Duration: 28 Oct 2001 → 2 Nov 2001

Publication series

Name	Materials Science Forum
Volume	389-393
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	International Conference on Silicon Carbide and Related Materials, ICSCRM 2001
Country/Territory	Japan
City	Tsukuba
Period	28/10/01 → 2/11/01

Bibliographical note

Publisher Copyright:
© (2002) Trans Tech Publications, Switzerland.

Other keywords

Deep-level transient spectroscopy
Interface states
MOS

Access to Document

10.4028/www.scientific.net/MSF.389-393.1005

Cite this

Ólafsson, H., Allerstam, F., & Sveinbjörnsson, E. (2002). On shallow interface states in n type 4H-SiC metal-oxide-semiconductor structures. In S. Yoshida, S. Nishino, H. Harima, & T. Kimoto (Eds.), Silicon Carbide and Related Materials 2001 (pp. 1005-1008). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.389-393.1005

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title = "On shallow interface states in n type 4H-SiC metal-oxide-semiconductor structures",

abstract = "We investigate the high density of shallow traps found at the 4H-SiC/SiO2 interface near the SiC conduction band edge by using constant-capacitance/conventional deep level transient spectroscopy. We find both fast and slow interface states and we estimate their electron capture cross sections to be less than 10-16 cm2 and 10-19 cm2 respectively.",

keywords = "Deep-level transient spectroscopy, Interface states, MOS",

author = "H. {\'O}lafsson and F. Allerstam and E. Sveinbj{\"o}rnsson",

note = "Publisher Copyright: {\textcopyright} (2002) Trans Tech Publications, Switzerland.; International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 ; Conference date: 28-10-2001 Through 02-11-2001",

year = "2002",

doi = "10.4028/www.scientific.net/MSF.389-393.1005",

language = "English",

isbn = "9780878498949",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

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Ólafsson, H, Allerstam, F & Sveinbjörnsson, E 2002, On shallow interface states in n type 4H-SiC metal-oxide-semiconductor structures. in S Yoshida, S Nishino, H Harima & T Kimoto (eds), Silicon Carbide and Related Materials 2001. Materials Science Forum, vol. 389-393, Trans Tech Publications Ltd, pp. 1005-1008, International Conference on Silicon Carbide and Related Materials, ICSCRM 2001, Tsukuba, Japan, 28/10/01. https://doi.org/10.4028/www.scientific.net/MSF.389-393.1005

On shallow interface states in n type 4H-SiC metal-oxide-semiconductor structures. / Ólafsson, H.; Allerstam, F.; Sveinbjörnsson, E.
Silicon Carbide and Related Materials 2001. ed. / S. Yoshida; S. Nishino; H. Harima; T. Kimoto. Trans Tech Publications Ltd, 2002. p. 1005-1008 (Materials Science Forum; Vol. 389-393).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ólafsson, H.

AU - Allerstam, F.

AU - Sveinbjörnsson, E.

N1 - Publisher Copyright: © (2002) Trans Tech Publications, Switzerland.

PY - 2002

Y1 - 2002

N2 - We investigate the high density of shallow traps found at the 4H-SiC/SiO2 interface near the SiC conduction band edge by using constant-capacitance/conventional deep level transient spectroscopy. We find both fast and slow interface states and we estimate their electron capture cross sections to be less than 10-16 cm2 and 10-19 cm2 respectively.

AB - We investigate the high density of shallow traps found at the 4H-SiC/SiO2 interface near the SiC conduction band edge by using constant-capacitance/conventional deep level transient spectroscopy. We find both fast and slow interface states and we estimate their electron capture cross sections to be less than 10-16 cm2 and 10-19 cm2 respectively.

KW - Deep-level transient spectroscopy

KW - Interface states

KW - MOS

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M3 - Conference contribution

AN - SCOPUS:18144442294

SN - 9780878498949

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EP - 1008

BT - Silicon Carbide and Related Materials 2001

A2 - Yoshida, S.

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PB - Trans Tech Publications Ltd

T2 - International Conference on Silicon Carbide and Related Materials, ICSCRM 2001

Y2 - 28 October 2001 through 2 November 2001

ER -

On shallow interface states in n type 4H-SiC metal-oxide-semiconductor structures

Abstract

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