Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures

A. M. Vidarsson; J. R. Nicholls; D. Haasmann; S. Dimitrijev; E. Sveinbjörnsson

doi:10.4028/p-8m5zs1

Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures

A. M. Vidarsson^*, J. R. Nicholls, D. Haasmann, S. Dimitrijev, E. Sveinbjörnsson

^*Corresponding author for this work

Faculty of Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The inversion channel electron mobility in 4H-SiC MOSFETs with NO annealed gate oxides is still well below its theoretical limit. The physical reason behind the reduced mobility is not yet fully established but has for example been attributed to a high density of very fast interface traps close to the conduction band edge. These traps are not detected by high-low CV analysis at room temperature but are observed by conductance spectroscopy at low temperatures. In this study we demonstrate how conventional high-low CV analysis of MOS capacitors at cryogenic temperatures can be applied to detect and quantify these very fast traps.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021
Editors	Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson
Publisher	Trans Tech Publications Ltd
Pages	288-292
Number of pages	5
ISBN (Print)	9783035727609
DOIs	https://doi.org/10.4028/p-8m5zs1
Publication status	Published - 31 May 2022
Event	13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 - Virtual, Online Duration: 24 Oct 2021 → 28 Oct 2021

Publication series

Name	Materials Science Forum
ISSN (Print)	1662-9752

Conference

Conference	13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021
City	Virtual, Online
Period	24/10/21 → 28/10/21

Bibliographical note

Funding Information:
J. R. Nicholls, D. Haasmann, and S. Dimitrijev were supported in part by SICC material Co., Ltd., China, as the industry partner in the Australian Research Council Linkage Project under Grant ARC LP 50100525. A. M. Vidarsson and E. Ö. Sveinbjörnsson were supported by the Icelandic Centre for Research (Rannis) and the University of Iceland Research Fund. Parts of this work were performed at the Queensland node of the Australian National Fabrication Facility (ANFF), a company established under the National Collaboration Research Infrastructure Strategy to provide nanofabrication and microfabrication facilities to Australia’s researchers.

Publisher Copyright:
© 2022 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.

Other keywords

4H-SiC
Capacitance analysis
Cryogenic temperatures
MOS capacitors
Near-interface traps

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10.4028/p-8m5zs1

Cite this

Vidarsson, A. M., Nicholls, J. R., Haasmann, D., Dimitrijev, S., & Sveinbjörnsson, E. (2022). Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures. In J. F. Michaud, L. V. Phung, D. Alquier, & D. Planson (Eds.), Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (pp. 288-292). (Materials Science Forum). Trans Tech Publications Ltd. https://doi.org/10.4028/p-8m5zs1

Vidarsson, A. M. ; Nicholls, J. R. ; Haasmann, D. et al. / Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures. Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021. editor / Jean François Michaud ; Luong Viet Phung ; Daniel Alquier ; Dominique Planson. Trans Tech Publications Ltd, 2022. pp. 288-292 (Materials Science Forum).

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title = "Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures",

abstract = "The inversion channel electron mobility in 4H-SiC MOSFETs with NO annealed gate oxides is still well below its theoretical limit. The physical reason behind the reduced mobility is not yet fully established but has for example been attributed to a high density of very fast interface traps close to the conduction band edge. These traps are not detected by high-low CV analysis at room temperature but are observed by conductance spectroscopy at low temperatures. In this study we demonstrate how conventional high-low CV analysis of MOS capacitors at cryogenic temperatures can be applied to detect and quantify these very fast traps.",

keywords = "4H-SiC, Capacitance analysis, Cryogenic temperatures, MOS capacitors, Near-interface traps",

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note = "Funding Information: J. R. Nicholls, D. Haasmann, and S. Dimitrijev were supported in part by SICC material Co., Ltd., China, as the industry partner in the Australian Research Council Linkage Project under Grant ARC LP 50100525. A. M. Vidarsson and E. {\"O}. Sveinbj{\"o}rnsson were supported by the Icelandic Centre for Research (Rannis) and the University of Iceland Research Fund. Parts of this work were performed at the Queensland node of the Australian National Fabrication Facility (ANFF), a company established under the National Collaboration Research Infrastructure Strategy to provide nanofabrication and microfabrication facilities to Australia{\textquoteright}s researchers. Publisher Copyright: {\textcopyright} 2022 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.; 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 ; Conference date: 24-10-2021 Through 28-10-2021",

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Vidarsson, AM, Nicholls, JR, Haasmann, D, Dimitrijev, S & Sveinbjörnsson, E 2022, Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures. in JF Michaud, LV Phung, D Alquier & D Planson (eds), Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021. Materials Science Forum, Trans Tech Publications Ltd, pp. 288-292, 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021, Virtual, Online, 24/10/21. https://doi.org/10.4028/p-8m5zs1

Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures. / Vidarsson, A. M.; Nicholls, J. R.; Haasmann, D. et al.
Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021. ed. / Jean François Michaud; Luong Viet Phung; Daniel Alquier; Dominique Planson. Trans Tech Publications Ltd, 2022. p. 288-292 (Materials Science Forum).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N1 - Funding Information: J. R. Nicholls, D. Haasmann, and S. Dimitrijev were supported in part by SICC material Co., Ltd., China, as the industry partner in the Australian Research Council Linkage Project under Grant ARC LP 50100525. A. M. Vidarsson and E. Ö. Sveinbjörnsson were supported by the Icelandic Centre for Research (Rannis) and the University of Iceland Research Fund. Parts of this work were performed at the Queensland node of the Australian National Fabrication Facility (ANFF), a company established under the National Collaboration Research Infrastructure Strategy to provide nanofabrication and microfabrication facilities to Australia’s researchers. Publisher Copyright: © 2022 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.

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AB - The inversion channel electron mobility in 4H-SiC MOSFETs with NO annealed gate oxides is still well below its theoretical limit. The physical reason behind the reduced mobility is not yet fully established but has for example been attributed to a high density of very fast interface traps close to the conduction band edge. These traps are not detected by high-low CV analysis at room temperature but are observed by conductance spectroscopy at low temperatures. In this study we demonstrate how conventional high-low CV analysis of MOS capacitors at cryogenic temperatures can be applied to detect and quantify these very fast traps.

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Vidarsson AM, Nicholls JR, Haasmann D, Dimitrijev S, Sveinbjörnsson E. Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures. In Michaud JF, Phung LV, Alquier D, Planson D, editors, Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021. Trans Tech Publications Ltd. 2022. p. 288-292. (Materials Science Forum). doi: 10.4028/p-8m5zs1

Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures

Abstract

Publication series

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Bibliographical note

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