Novel hydrogen-gold-related deep acceptor in n-type silicon

E. Ö Sveinbjörnsson*, Olof Engström

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)


Using deep level transient spectroscopy (DLTS) on gold-doped n-type Czochralski (CZ) and float zone (FZ) silicon we observe a new gold-related acceptor level (G) with an activation energy ΔE=0.19 eV and an electron capture cross section σn=1×10-17 cm 2. The center is formed after hydrogenation by etching a few microns off the sample surface using HF:HNO3 based etch. We suggest that there are (at least) two possible Au-H complex centers, one which is electrically inactive and another which gives rise to an acceptor level (ΔE=0.19 eV) in the band gap of n-type silicon. The electrically active center anneals out at 250°C while the electrically inactive one is more stable and has been observed earlier in remote plasma hydrogenation experiments performed at 150-350°C.

Original languageEnglish
Pages (from-to)2323-2325
Number of pages3
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 1992


Dive into the research topics of 'Novel hydrogen-gold-related deep acceptor in n-type silicon'. Together they form a unique fingerprint.

Cite this