TY - GEN
T1 - Noise processes and their origin in Mg-doped GaN
AU - Seghier, Djelloul
AU - Gislason, Haflidi P.
PY - 2005
Y1 - 2005
N2 - We investigated p-type epitaxial GaN:Mg materials using low frequency noise spectroscopy. The noise signal consists of a generation-recombination related contribution and a 1/f tail the causes of which are incompletely understood. The magnitude of the 1/f noise is affected by defect traps located either in the bulk material or at the surface. The generation-recombination noise is attributed to a metastable DX-like center.
AB - We investigated p-type epitaxial GaN:Mg materials using low frequency noise spectroscopy. The noise signal consists of a generation-recombination related contribution and a 1/f tail the causes of which are incompletely understood. The magnitude of the 1/f noise is affected by defect traps located either in the bulk material or at the surface. The generation-recombination noise is attributed to a metastable DX-like center.
UR - http://www.scopus.com/inward/record.url?scp=33746606498&partnerID=8YFLogxK
U2 - 10.1109/SIM.2005.1511424
DO - 10.1109/SIM.2005.1511424
M3 - Conference contribution
AN - SCOPUS:33746606498
SN - 078038668X
SN - 9780780386686
T3 - IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
SP - 226
EP - 229
BT - 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
T2 - 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Y2 - 20 September 2004 through 25 September 2004
ER -