@inproceedings{a0065dcbb3494ca5a3f3adcbb3cd7c87,
title = "Noise measurements in Mg-doped GaN",
abstract = "We investigated p-type epitaxial GaN:Mg materials using low frequency noise spectroscopy. The noise signal consists of a 1/f tail along with a generation-recombination contribution. In this paper we focus on the 1/f noise, the origin of which is incompletely understood. High values of the Hooge parameter in our samples indicate an inhomogeneous defect concentration.",
author = "D. Seghier and Gislason, {H. P.}",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994077",
language = "English",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "229--230",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}