New evidence of interfacial oxide traps in n-type 4H- and 6H-SiC MOS structures

H. Ólafsson, E. Sveinbjörnsson, T. E. Rudenko, V. I. Kilchytska, I. P. Tyagulski, I. N. Osiyuk

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Citations (Scopus)

Abstract

We find a high density of shallow slow interface states in n type 4H-SiC metal- oxide-semiconductor (MOS) capacitors using thermally stimulated current analysis. The energy distribution of the interface states is non-uniform and the interface state density is peaked approximately 0.14±0.03 eV below the conduction band edge. The majority of the interface states are slow with an electron capture cross section smaller than 10-19 cm2 at 175 K. Such states are absent in n type 6H-SiC MOS capacitors.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsS. Yoshida, S. Nishino, H. Harima, T. Kimoto
PublisherTrans Tech Publications Ltd
Pages1001-1004
Number of pages4
ISBN (Print)9780878498949
DOIs
Publication statusPublished - 2002
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: 28 Oct 20012 Nov 2001

Publication series

NameMaterials Science Forum
Volume389-393
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
Country/TerritoryJapan
CityTsukuba
Period28/10/012/11/01

Bibliographical note

Publisher Copyright:
© (2002) Trans Tech Publications, Switzerland.

Other keywords

  • Interface states
  • MOS
  • Thermally stimulated currents

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