Morphology of TiN thin films grown on MgO(001) by reactive dc magnetron sputtering

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Abstract

Thin TiN films were grown by reactive dc magnetron sputtering on single-crystalline MgO(001) substrates at a range of temperatures from room temperature to 600 °C. Structural characterization was carried out using x-ray diffraction and reflection methods. TiN films grow epitaxially on the MgO substrates at growth temperatures of 200 °C and above. The crystal coherence length determined from Laue oscillations and the Scherrer method agrees with x-ray reflection thickness measurements to 6% and within 3% for growth temperatures of 200 and 600 °C, respectively. For lower growth temperatures the films are polycrystalline but highly textured and porous.

Original languageEnglish
Pages (from-to)912-915
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume28
Issue number4
DOIs
Publication statusPublished - Jul 2010

Bibliographical note

Funding Information:
This work was partially funded by the Icelandic Research Fund, the University of Iceland Research Fund, and the Steinmaur foundation.

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