Abstract
Thin tantalum nitride films were grown on fused quartz by reactive high power impulse magnetron sputtering (HiPIMS) while varying the fractional N2 flow rate at fixed substrate temperature of 400°C. The film properties were compared to films grown by conventional dc magnetron sputtering (dcMS) at similar conditions. Structural characterization was carried out using X-ray diffraction and reflection methods. The HiPIMS process produces slightly less dense films than does dcMS and the surface roughness is similar for both the HiPIMS and dcMS grown films. The deposition rate for HiPIMS is up to 80 % lower than for dcMS but it can be roughly doubled by lowering the magnetic field strength by 30 %.
Original language | English |
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Title of host publication | Plasma-Based Materials Science and Engineering |
Editors | M. Sankaran, D. Horwat, C. Clavero, R. Gago |
Publisher | Materials Research Society |
Pages | 21-26 |
Number of pages | 6 |
ISBN (Electronic) | 9781510826564 |
DOIs | |
Publication status | Published - 2015 |
Event | 2015 MRS Spring Meeting - San Francisco, United States Duration: 6 Apr 2015 → 10 Apr 2015 |
Publication series
Name | Materials Research Society Symposium Proceedings |
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Volume | 1803 |
ISSN (Print) | 0272-9172 |
Conference
Conference | 2015 MRS Spring Meeting |
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Country/Territory | United States |
City | San Francisco |
Period | 6/04/15 → 10/04/15 |
Bibliographical note
Publisher Copyright:© 2015 Materials Research Society.