Magnetic field dependence of gate voltage and current in a GaAs-heterostructure in the quantum hall regime

D. Weiss*, V. Mosser, V. Gudmundsson, R. R. Gerhardts, K. v. Klitzing

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

The current flow at a fixed gate voltage and the floating gate voltage for fixed charge density in a gated GaAs heterostructure have been measured as a function of the magnetic field. The voltage oscillations which reflect the behaviour of the chemical potential have been clearly resolved. The experimental results are explained by a statistical model of inhomogeneities in the carrier concentration implying an effective density of states between the Landau levels.

Original languageEnglish
Pages (from-to)89-91
Number of pages3
JournalSolid State Communications
Volume62
Issue number2
DOIs
Publication statusPublished - Apr 1987

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