High-power-density 4H-SiC RF MOSFETs

G. Gudjónsson*, F. Allerstam, H. Ö Ólafsson, P. Å Nilsson, H. Hjelmgren, K. Andersson, E. Ö Sveinbjörnsson, H. Zirath, T. Rödle, R. Jos

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The authors have made the first 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger, and a total gate width of 0.8 mm. To their knowledge, this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs.

Original languageEnglish
Pages (from-to)469-471
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number6
DOIs
Publication statusPublished - Jun 2006

Other keywords

  • Microwave application
  • MOSFET
  • Silicon carbide

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