High power-density 4H-SiC RF MOSFETs

G. Gudjónsson*, F. Allerstam, H. Ö Ólafsson, P. Å Nilsson, H. Hjelmgren, K. Andersson, E. Ö Sveinbjörnsson, H. Zirath, T. Rödle, R. Jos

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm. To our knowledge this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
PublisherTrans Tech Publications Ltd
Number of pages4
EditionPART 2
ISBN (Print)9780878494255
Publication statusPublished - 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: 18 Sept 200523 Sept 2005

Publication series

NameMaterials Science Forum
NumberPART 2
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


ConferenceInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Country/TerritoryUnited States
CityPittsburgh, PA

Other keywords

  • 4H-SiC
  • High frequency
  • High power


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