High field effect electron mobility in Si face 4H-SiC MOSFET

Einar Örn Sveinbjörnsson; Halldór Ö.  Ólafsson; G. Gudjonsson; Per-Åke  Nilsson; Herbert Zirath; Thomas  Rödle; Rik  Jos

High field effect electron mobility in Si face 4H-SiC MOSFET

Einar Örn Sveinbjörnsson, Halldór Ö. Ólafsson, G. Gudjonsson, Per-Åke Nilsson, Herbert Zirath, Thomas Rödle, Rik Jos

Faculty of Physical Sciences

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Electronics Letters
Publication status	Published - 2004

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https://www.researchgate.net/publication/3386854_High_field_effect_mobility_in_Si_face_4H-SiC_MOSFET_transistors

Cite this

@article{e4d6ee46e9044ac4926f496899e6ec8e,

title = "High field effect electron mobility in Si face 4H-SiC MOSFET",

author = "Sveinbj{\"o}rnsson, {Einar {\"O}rn} and {\'O}lafsson, {Halld{\'o}r {\"O}.} and G. Gudjonsson and Per-{\AA}ke Nilsson and Herbert Zirath and Thomas R{\"o}dle and Rik Jos",

year = "2004",

language = "English",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

}