@inproceedings{b1a537eeac924a79b6c909fb6630d22c,
title = "Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation",
abstract = "This paper reports studies of deep acceptor-type interface traps at the 4H-SiC/SiO2 interface. These traps are created during sodium enhanced oxidation of Si-terminated 4H-SiC. The trap concentration is above 3×1012 cm-2 and their activation energy is larger than 0.8 eV.",
keywords = "Deep interface trap, Interface states, Sodium",
author = "F. Allerstam and G. Gudj{\'o}nsson and Sveinbj{\"o}rnsson, {E. {\"O}} and T. Rodle and R. Jos",
year = "2007",
doi = "10.4028/0-87849-442-1.517",
language = "English",
isbn = "0878494421",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "517--520",
editor = "N. Wright and C.M. Johnson and K. Vassilevski and I. Nikitina and A. Horsfall",
booktitle = "Silicon Carbide and Related Materials 2006 - ECSCRM 20006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials",
note = "6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006 ; Conference date: 03-09-2006 Through 07-09-2007",
}