Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

F. Allerstam*, G. Gudjónsson, E. Ö Sveinbjörnsson, T. Rodle, R. Jos

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper reports studies of deep acceptor-type interface traps at the 4H-SiC/SiO2 interface. These traps are created during sodium enhanced oxidation of Si-terminated 4H-SiC. The trap concentration is above 3×1012 cm-2 and their activation energy is larger than 0.8 eV.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2006 - ECSCRM 20006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials
EditorsN. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina, A. Horsfall
PublisherTrans Tech Publications Ltd
Pages517-520
Number of pages4
ISBN (Print)0878494421, 9780878494422, 9780878494422
DOIs
Publication statusPublished - 2007
Event6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006 - Newcastle upon Tyne, United Kingdom
Duration: 3 Sep 20067 Sep 2007

Publication series

NameMaterials Science Forum
Volume556-557
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006
Country/TerritoryUnited Kingdom
CityNewcastle upon Tyne
Period3/09/067/09/07

Other keywords

  • Deep interface trap
  • Interface states
  • Sodium

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