Floquet Engineering of Gapped 2D Materials

O. V. Kibis*, K. Dini, I. V. Iorsh, I. A. Shelykh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

It is demonstrated theoretically that the interaction of gapped 2D materials (gapped graphene and transition metal dichalchogenide monolayers) with a strong high-frequency electromagnetic field (dressing field) crucially changes the band structure of the materials. As a consequence, the renormalized band structure of the materials drastically depends on the field polarization. Particularly, a linearly polarized dressing field always decreases band gaps, whereas a circularly polarized field breaks the equivalence of band valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. It is shown also that a dressing field can turn both the band gaps and the spin splitting of the bands into zero. As a result, the dressing field can serve as an effective tool to control spin and valley properties of the materials in various optoelectronic applications.

Original languageEnglish
Pages (from-to)523-525
Number of pages3
JournalSemiconductors
Volume52
Issue number4
DOIs
Publication statusPublished - 1 Apr 2018

Bibliographical note

Publisher Copyright:
© 2018, Pleiades Publishing, Ltd.

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