Floquet engineering of 2D materials

O. V. Kibis, I. V. Iorsh, Ivan Shelykh

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We demonstrate theoretically that the interaction of electrons in the 2D materials (gapped graphene and transition metal dichalchogenide monolayer) with a strong off-resonant electromagnetic field substantially renormalizes their band structure, including the band gaps and the spin-orbit splitting. Moreover, the renormalized electronic parameters drastically depend on the field polarization. Namely, a linearly polarized field always decreases the band gap (and, particularly, can turn the gap into zero), whereas a circularly polarized field breaks the equivalence of valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. As a consequence, the field can serve an effective tool to control spin and valley properties of the 2D materials and be potentially exploited in optoelectronic applications.
Original languageEnglish
Number of pages12064
JournalJournal of Physics: Conference Series
Volume1461
Issue number1
DOIs
Publication statusPublished - 23 Apr 2020

Other keywords

  • Electromagnetic fields
  • 2D materials
  • Electrons
  • Segulmagn
  • Rafeindir

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