ELECTRONIC STRUCTURE AND PHONON INTERACTION OF NEUTRAL Cu-Li CENTRES IN GaP.

H. P. Gislason; B. Monemar; M. E. Pistol; D. C. Herbert; A. Kana'ah; B. C. Cavenett

doi:10.1007/978-1-4615-7682-2_140

ELECTRONIC STRUCTURE AND PHONON INTERACTION OF NEUTRAL Cu-Li CENTRES IN GaP.

H. P. Gislason^*, B. Monemar, M. E. Pistol, D. C. Herbert, A. Kana'ah, B. C. Cavenett

^*Corresponding author for this work

Faculty of Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Neutral defect complexes in semiconductors of the type often called isoelectronic defects are characterized by charge neutrality with respect to the host lattice, in the sense that the defect does not bind electronic particles in its ground state. The dominant electronic excitation of such a defect can be described as a bound electron-hole pair, usually referred to as a bound exciton (BE). As a conclusion of an investigation of the (Cu-Li) centres discussed, we propose that all three centres have similar chemical identity, Li//iCu//G//aCu//i.

Original language	English
Title of host publication	Springer Verlag
Publisher	Springer Verlag
Pages	635-638
Number of pages	4
ISBN (Print)	0387961089, 9780387961088
DOIs	https://doi.org/10.1007/978-1-4615-7682-2_140
Publication status	Published - 1985

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title = "ELECTRONIC STRUCTURE AND PHONON INTERACTION OF NEUTRAL Cu-Li CENTRES IN GaP.",

abstract = "Neutral defect complexes in semiconductors of the type often called isoelectronic defects are characterized by charge neutrality with respect to the host lattice, in the sense that the defect does not bind electronic particles in its ground state. The dominant electronic excitation of such a defect can be described as a bound electron-hole pair, usually referred to as a bound exciton (BE). As a conclusion of an investigation of the (Cu-Li) centres discussed, we propose that all three centres have similar chemical identity, Li//iCu//G//aCu//i.",

author = "Gislason, {H. P.} and B. Monemar and Pistol, {M. E.} and Herbert, {D. C.} and A. Kana'ah and Cavenett, {B. C.}",

year = "1985",

doi = "10.1007/978-1-4615-7682-2_140",

language = "English",

isbn = "0387961089",

publisher = "Springer Verlag",

pages = "635--638",

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T1 - ELECTRONIC STRUCTURE AND PHONON INTERACTION OF NEUTRAL Cu-Li CENTRES IN GaP.

AU - Gislason, H. P.

AU - Monemar, B.

AU - Pistol, M. E.

AU - Herbert, D. C.

AU - Kana'ah, A.

AU - Cavenett, B. C.

PY - 1985

Y1 - 1985

N2 - Neutral defect complexes in semiconductors of the type often called isoelectronic defects are characterized by charge neutrality with respect to the host lattice, in the sense that the defect does not bind electronic particles in its ground state. The dominant electronic excitation of such a defect can be described as a bound electron-hole pair, usually referred to as a bound exciton (BE). As a conclusion of an investigation of the (Cu-Li) centres discussed, we propose that all three centres have similar chemical identity, Li//iCu//G//aCu//i.

AB - Neutral defect complexes in semiconductors of the type often called isoelectronic defects are characterized by charge neutrality with respect to the host lattice, in the sense that the defect does not bind electronic particles in its ground state. The dominant electronic excitation of such a defect can be described as a bound electron-hole pair, usually referred to as a bound exciton (BE). As a conclusion of an investigation of the (Cu-Li) centres discussed, we propose that all three centres have similar chemical identity, Li//iCu//G//aCu//i.

UR - http://www.scopus.com/inward/record.url?scp=0022188828&partnerID=8YFLogxK

U2 - 10.1007/978-1-4615-7682-2_140

DO - 10.1007/978-1-4615-7682-2_140

M3 - Conference contribution

AN - SCOPUS:0022188828

SN - 0387961089

SN - 9780387961088

SP - 635

EP - 638

BT - Springer Verlag

PB - Springer Verlag

ER -

ELECTRONIC STRUCTURE AND PHONON INTERACTION OF NEUTRAL Cu-Li CENTRES IN GaP.

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