Electrical characterization of MgO tunnel barriers grown on InAs (001) epilayers

F. Magnus*, S. K. Clowes, A. M. Gilbertson, W. R. Branford, E. D. Barkhoudarov, L. F. Cohen, L. J. Singh, Z. H. Barber, M. G. Blamire, P. D. Buckle, L. Buckle, T. Ashley, D. A. Eustace, D. W. McComb

*Corresponding author for this work

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The authors examine the electrical properties of ultrathin MgO barriers grown on (001) InAs epilayers and the dependence on InAs surface pretreatment and growth conditions. Pretreatment improves the yield of tunnel junctions and changes the roughness of the interface between oxide and semiconductor. Electrical characterization confirms that tunnel barriers with appropriate values of interface resistance for efficient spin injection/detection have been achieved. Using the Rowell criteria and various tunneling models, the authors show that single step tunneling occurs above 150 K. Incorporating a thermal smearing model suggests that tunneling is the dominant transport process down to 10 K.

Original languageEnglish
Article number122106
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2007

Bibliographical note

Funding Information:
This work was supported by the UK-EPSRC Grant No. EP/C511972 and EP/C511980. We thank Professor R. Magnus for valuable advice.


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