Electrical characterization of MgO tunnel barriers grown on InAs (001) epilayers

F. Magnus; S. K. Clowes; A. M. Gilbertson; W. R. Branford; E. D. Barkhoudarov; L. F. Cohen; L. J. Singh; Z. H. Barber; M. G. Blamire; P. D. Buckle; L. Buckle; T. Ashley; D. A. Eustace; D. W. McComb

doi:10.1063/1.2784933

Electrical characterization of MgO tunnel barriers grown on InAs (001) epilayers

F. Magnus^*, S. K. Clowes, A. M. Gilbertson, W. R. Branford, E. D. Barkhoudarov, L. F. Cohen, L. J. Singh, Z. H. Barber, M. G. Blamire, P. D. Buckle, L. Buckle, T. Ashley, D. A. Eustace, D. W. McComb

^*Corresponding author for this work

Science Institute

Research output: Contribution to journal › Article › peer-review

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Abstract

The authors examine the electrical properties of ultrathin MgO barriers grown on (001) InAs epilayers and the dependence on InAs surface pretreatment and growth conditions. Pretreatment improves the yield of tunnel junctions and changes the roughness of the interface between oxide and semiconductor. Electrical characterization confirms that tunnel barriers with appropriate values of interface resistance for efficient spin injection/detection have been achieved. Using the Rowell criteria and various tunneling models, the authors show that single step tunneling occurs above 150 K. Incorporating a thermal smearing model suggests that tunneling is the dominant transport process down to 10 K.

Original language	English
Article number	122106
Journal	Applied Physics Letters
Volume	91
Issue number	12
DOIs	https://doi.org/10.1063/1.2784933
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the UK-EPSRC Grant No. EP/C511972 and EP/C511980. We thank Professor R. Magnus for valuable advice.

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Magnus, F., Clowes, S. K., Gilbertson, A. M., Branford, W. R., Barkhoudarov, E. D., Cohen, L. F., Singh, L. J., Barber, Z. H., Blamire, M. G., Buckle, P. D., Buckle, L., Ashley, T., Eustace, D. A., & McComb, D. W. (2007). Electrical characterization of MgO tunnel barriers grown on InAs (001) epilayers. Applied Physics Letters, 91(12), [122106]. https://doi.org/10.1063/1.2784933

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title = "Electrical characterization of MgO tunnel barriers grown on InAs (001) epilayers",

abstract = "The authors examine the electrical properties of ultrathin MgO barriers grown on (001) InAs epilayers and the dependence on InAs surface pretreatment and growth conditions. Pretreatment improves the yield of tunnel junctions and changes the roughness of the interface between oxide and semiconductor. Electrical characterization confirms that tunnel barriers with appropriate values of interface resistance for efficient spin injection/detection have been achieved. Using the Rowell criteria and various tunneling models, the authors show that single step tunneling occurs above 150 K. Incorporating a thermal smearing model suggests that tunneling is the dominant transport process down to 10 K.",

author = "F. Magnus and Clowes, {S. K.} and Gilbertson, {A. M.} and Branford, {W. R.} and Barkhoudarov, {E. D.} and Cohen, {L. F.} and Singh, {L. J.} and Barber, {Z. H.} and Blamire, {M. G.} and Buckle, {P. D.} and L. Buckle and T. Ashley and Eustace, {D. A.} and McComb, {D. W.}",

note = "Funding Information: This work was supported by the UK-EPSRC Grant No. EP/C511972 and EP/C511980. We thank Professor R. Magnus for valuable advice.",

year = "2007",

doi = "10.1063/1.2784933",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

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T1 - Electrical characterization of MgO tunnel barriers grown on InAs (001) epilayers

AU - Magnus, F.

AU - Clowes, S. K.

AU - Gilbertson, A. M.

AU - Branford, W. R.

AU - Barkhoudarov, E. D.

AU - Cohen, L. F.

AU - Singh, L. J.

AU - Barber, Z. H.

AU - Blamire, M. G.

AU - Buckle, P. D.

AU - Buckle, L.

AU - Ashley, T.

AU - Eustace, D. A.

AU - McComb, D. W.

N1 - Funding Information: This work was supported by the UK-EPSRC Grant No. EP/C511972 and EP/C511980. We thank Professor R. Magnus for valuable advice.

PY - 2007

Y1 - 2007

N2 - The authors examine the electrical properties of ultrathin MgO barriers grown on (001) InAs epilayers and the dependence on InAs surface pretreatment and growth conditions. Pretreatment improves the yield of tunnel junctions and changes the roughness of the interface between oxide and semiconductor. Electrical characterization confirms that tunnel barriers with appropriate values of interface resistance for efficient spin injection/detection have been achieved. Using the Rowell criteria and various tunneling models, the authors show that single step tunneling occurs above 150 K. Incorporating a thermal smearing model suggests that tunneling is the dominant transport process down to 10 K.

AB - The authors examine the electrical properties of ultrathin MgO barriers grown on (001) InAs epilayers and the dependence on InAs surface pretreatment and growth conditions. Pretreatment improves the yield of tunnel junctions and changes the roughness of the interface between oxide and semiconductor. Electrical characterization confirms that tunnel barriers with appropriate values of interface resistance for efficient spin injection/detection have been achieved. Using the Rowell criteria and various tunneling models, the authors show that single step tunneling occurs above 150 K. Incorporating a thermal smearing model suggests that tunneling is the dominant transport process down to 10 K.

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DO - 10.1063/1.2784933

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VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122106

ER -

Electrical characterization of MgO tunnel barriers grown on InAs (001) epilayers

Abstract

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