Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Rabia Yasmin Khosa, J.T. Chen, M. Winters, Kjartan Pálsson, R. Karhu, J. Hassan, N. Rorsman, Einar Sveinbjörnsson

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1 Citation (Scopus)


We report promising results regarding the possible use of AlN or Al 2 O 3 as a gate dielectric in 4H-SiC MISFETs. The crystalline AlN films are grown by hot wall metal organic chemical vapor deposition (MOCVD) at 1100 °C. The amorphous Al 2 O 3 films are grown by repeated deposition and subsequent low temperature (200 °C) oxidation of thin Al layers using a hot plate. Our investigation shows a very low density of interface traps at the AlN/4H-SiC and the Al 2 O 3 /4H-SiC interface estimated from capacitance-voltage (CV) analysis of MIS capacitors. Current-voltage (IV) analysis shows that the breakdown electric field across the AlN or Al 2 O 3 is ∼ 3 MV/cm or ∼ 5 MV/cm respectively. By depositing an additional SiO 2 layer by plasma enhanced chemical vapor deposition at 300 °C on top of the AlN or Al 2 O 3 layers, it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC or Al 2 O 3 /SiC interfaces.
Original languageEnglish
Pages (from-to)55-58
JournalMaterials Science in Semiconductor Processing
Publication statusPublished - 1 Aug 2019

Other keywords

  • Al 2 O 3 /4H-SiC interface
  • AlN/4H-SiC interface
  • Interface traps
  • MIS structure
  • Raffræði
  • Rafeindafræði


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