We report promising results regarding the possible use of AlN or Al 2 O 3 as a gate dielectric in 4H-SiC MISFETs. The crystalline AlN films are grown by hot wall metal organic chemical vapor deposition (MOCVD) at 1100 °C. The amorphous Al 2 O 3 films are grown by repeated deposition and subsequent low temperature (200 °C) oxidation of thin Al layers using a hot plate. Our investigation shows a very low density of interface traps at the AlN/4H-SiC and the Al 2 O 3 /4H-SiC interface estimated from capacitance-voltage (CV) analysis of MIS capacitors. Current-voltage (IV) analysis shows that the breakdown electric field across the AlN or Al 2 O 3 is ∼ 3 MV/cm or ∼ 5 MV/cm respectively. By depositing an additional SiO 2 layer by plasma enhanced chemical vapor deposition at 300 °C on top of the AlN or Al 2 O 3 layers, it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC or Al 2 O 3 /SiC interfaces.
|Journal||Materials Science in Semiconductor Processing|
|Publication status||Published - 1 Aug 2019|
- Al 2 O 3 /4H-SiC interface
- AlN/4H-SiC interface
- Interface traps
- MIS structure