Effects of Cu diffusion on electrical properties of GaAs

D. Seghier*, H. P. Gislason

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

4 Citations (Scopus)

Abstract

We investigated semi-insulating GaAs samples produced by Cu diffusion into n-type starting material by means of thermally stimulated current (TSC) and photoconductivity (PC) measurements. We show that the Cu-diffusion changes the EL2 centre into a deep donor (T3) with a lower activation energy, 0.7 eV. Similar effects have been observed in MBE GaAs grown at low temperature. The PC quenching and recovery of the T3 trap are similar to those usually observed for EL2. We conclude that the deep donor is a complex centre involving AsGa. In addition, we observe the usual Cu acceptor levels CuA and CuB at Ev + 0.15 and Ev + 0.4 eV. The dynamics of optical quenching and thermal recovery of the TSC signal from the Cu levels suggest that they are neither related to EL2 nor two levels of the same Cu-related double acceptor.

Original languageEnglish
Pages161-164
Number of pages4
Publication statusPublished - 1999
EventProceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA
Duration: 1 Jun 19985 Jun 1998

Conference

ConferenceProceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)
CityBerkeley, CA, USA
Period1/06/985/06/98

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