Direct observation of hydrogen passivation of nitrogen-related energy levels in ZnSe and ZnSxSe1-x grown by MBE

D. Seghier*, J. T. Gudmundsson, H. P. Gislason

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

The effect of hydrogenation on the electrical properties of N-doped ZnSe and ZnSxSe1-x films grown by molecular-beam epitaxy is investigated. Hydrogenation of samples with a net acceptor density (Na - Nd) around (2-5) × 1016 cm-3 decreases the net acceptor density close to the surface and the peak height in deep-level transient spectra of the dominating nitrogen acceptor with activation energies 110 and 120meV in ZnSe and ZnS0.08Se0.82 thin films, respectively. Samples with Na - Nd in the 1017 cm-3 range did not exhibit such changes, while samples with Na - Nd less than few times 1016 cm-3 became highly resistive.

Original languageEnglish
Pages (from-to)478-481
Number of pages4
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2 Jun 2000
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1 Nov 19995 Nov 1999

Bibliographical note

Funding Information:
This research was supported by the Icelandic Research Council and the University Research Fund. We are grateful to Prof. B.C. Cavenett and Prof. K.A. Prior for providing the samples used in this study. J.T.G. thanks the hospitality of Prof. M.A. Lieberman and the experimental assistance of A. M. Marakhtanov at University of California at Berkeley where the hydrogenation was performed.

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