Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods

Arnar M. Vidarsson; Jordan R. Nicholls; Daniel Haasmann; Sima Dimitrijev; Einar O. Sveinbjörnsson

doi:10.1063/5.0086974

Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods

Arnar M. Vidarsson^*, Jordan R. Nicholls, Daniel Haasmann, Sima Dimitrijev, Einar O. Sveinbjörnsson

^*Corresponding author for this work

Faculty of Physical Sciences

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Fast near-interface (NI) traps have recently been suggested to be the main cause for poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors. Combining capacitance, conductance, and thermal dielectric relaxation current (TDRC) analysis at low temperatures of nitrided SiC MOS capacitors, we observe two categories of fast and slow near-interface traps at the SiO2/4H-SiC interface. TDRC reveals a suppression of slow near-interface traps after nitridation. Capacitance and conductance analysis reveals a high density of fast NI traps close to the SiC conduction band edge that are enhanced by nitridation. The very fast response of NI traps prevents them from detection using TDRC or deep level transient spectroscopy.

Original language	English
Article number	215702
Journal	Journal of Applied Physics
Volume	131
Issue number	21
DOIs	https://doi.org/10.1063/5.0086974
Publication status	Published - 7 Jun 2022

Bibliographical note

Funding Information:
A. M. Vidarsson and E. Ö. Sveinbjörnsson were supported by the Icelandic Centre for Research (Rannis) under Grant No. 185412-052 and the University of Iceland Research Fund. Parts of this work were performed at the Queensland node of the Australian National Fabrication Facility (ANFF), a company established under the National Collaboration Research Infrastructure Strategy to provide nanofabrication and microfabrication facilities to Australia’s researchers.

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© 2022 Author(s).

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10.1063/5.0086974

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title = "Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods",

abstract = "Fast near-interface (NI) traps have recently been suggested to be the main cause for poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors. Combining capacitance, conductance, and thermal dielectric relaxation current (TDRC) analysis at low temperatures of nitrided SiC MOS capacitors, we observe two categories of fast and slow near-interface traps at the SiO2/4H-SiC interface. TDRC reveals a suppression of slow near-interface traps after nitridation. Capacitance and conductance analysis reveals a high density of fast NI traps close to the SiC conduction band edge that are enhanced by nitridation. The very fast response of NI traps prevents them from detection using TDRC or deep level transient spectroscopy.",

author = "Vidarsson, {Arnar M.} and Nicholls, {Jordan R.} and Daniel Haasmann and Sima Dimitrijev and Sveinbj{\"o}rnsson, {Einar O.}",

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AU - Vidarsson, Arnar M.

AU - Nicholls, Jordan R.

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AU - Dimitrijev, Sima

AU - Sveinbjörnsson, Einar O.

N1 - Funding Information: A. M. Vidarsson and E. Ö. Sveinbjörnsson were supported by the Icelandic Centre for Research (Rannis) under Grant No. 185412-052 and the University of Iceland Research Fund. Parts of this work were performed at the Queensland node of the Australian National Fabrication Facility (ANFF), a company established under the National Collaboration Research Infrastructure Strategy to provide nanofabrication and microfabrication facilities to Australia’s researchers. Publisher Copyright: © 2022 Author(s).

PY - 2022/6/7

Y1 - 2022/6/7

N2 - Fast near-interface (NI) traps have recently been suggested to be the main cause for poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors. Combining capacitance, conductance, and thermal dielectric relaxation current (TDRC) analysis at low temperatures of nitrided SiC MOS capacitors, we observe two categories of fast and slow near-interface traps at the SiO2/4H-SiC interface. TDRC reveals a suppression of slow near-interface traps after nitridation. Capacitance and conductance analysis reveals a high density of fast NI traps close to the SiC conduction band edge that are enhanced by nitridation. The very fast response of NI traps prevents them from detection using TDRC or deep level transient spectroscopy.

AB - Fast near-interface (NI) traps have recently been suggested to be the main cause for poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors. Combining capacitance, conductance, and thermal dielectric relaxation current (TDRC) analysis at low temperatures of nitrided SiC MOS capacitors, we observe two categories of fast and slow near-interface traps at the SiO2/4H-SiC interface. TDRC reveals a suppression of slow near-interface traps after nitridation. Capacitance and conductance analysis reveals a high density of fast NI traps close to the SiC conduction band edge that are enhanced by nitridation. The very fast response of NI traps prevents them from detection using TDRC or deep level transient spectroscopy.

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Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods

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