Deep-defect related generation-recombination noise in GaAs

D. Seghier*, T. M. Arinbjamason, H. P. Gislason

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report results from noise spectroscopy and deep level transient spectroscopy on silicon-doped GaAs. We observe generation-recombination noise components which originate from two deep defects. The centers are located throughout the material. A defect with an emission enregy of 0.55 eV is found to be metastable. We attribute this center to a complex defect involving EL2 generated by the presence of silicon. Further measurements are in progress to elucidate the origin of the observed traps.

Original languageEnglish
Title of host publication2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Pages234-237
Number of pages4
DOIs
Publication statusPublished - 2005
Event2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China
Duration: 20 Sep 200425 Sep 2004

Publication series

NameIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
Volume2005

Conference

Conference2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Country/TerritoryChina
CityBeijing
Period20/09/0425/09/04

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