Deep-defect related generation-recombination noise in GaAs

D. Seghier; T. M. Arinbjamason; H. P. Gislason

doi:10.1109/SIM.2005.1511426

Deep-defect related generation-recombination noise in GaAs

D. Seghier^*, T. M. Arinbjamason, H. P. Gislason

^*Corresponding author for this work

Faculty of Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report results from noise spectroscopy and deep level transient spectroscopy on silicon-doped GaAs. We observe generation-recombination noise components which originate from two deep defects. The centers are located throughout the material. A defect with an emission enregy of 0.55 eV is found to be metastable. We attribute this center to a complex defect involving EL2 generated by the presence of silicon. Further measurements are in progress to elucidate the origin of the observed traps.

Original language	English
Title of host publication	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Pages	234-237
Number of pages	4
DOIs	https://doi.org/10.1109/SIM.2005.1511426
Publication status	Published - 2005
Event	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China Duration: 20 Sep 2004 → 25 Sep 2004

Publication series

Name	IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
Volume	2005

Conference

Conference	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Country/Territory	China
City	Beijing
Period	20/09/04 → 25/09/04

Access to Document

10.1109/SIM.2005.1511426

Cite this

@inproceedings{eacf0321ec6a4a41adb00d81cd84f0fa,

title = "Deep-defect related generation-recombination noise in GaAs",

abstract = "We report results from noise spectroscopy and deep level transient spectroscopy on silicon-doped GaAs. We observe generation-recombination noise components which originate from two deep defects. The centers are located throughout the material. A defect with an emission enregy of 0.55 eV is found to be metastable. We attribute this center to a complex defect involving EL2 generated by the presence of silicon. Further measurements are in progress to elucidate the origin of the observed traps.",

author = "D. Seghier and Arinbjamason, {T. M.} and Gislason, {H. P.}",

year = "2005",

doi = "10.1109/SIM.2005.1511426",

language = "English",

isbn = "078038668X",

series = "IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC",

pages = "234--237",

booktitle = "2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004",

note = "2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 ; Conference date: 20-09-2004 Through 25-09-2004",

}

Seghier, D, Arinbjamason, TM & Gislason, HP 2005, Deep-defect related generation-recombination noise in GaAs. in 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004., 1511426, IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, vol. 2005, pp. 234-237, 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004, Beijing, China, 20/09/04. https://doi.org/10.1109/SIM.2005.1511426

Deep-defect related generation-recombination noise in GaAs. / Seghier, D.; Arinbjamason, T. M.; Gislason, H. P.

2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004. 2005. p. 234-237 1511426 (IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Deep-defect related generation-recombination noise in GaAs

AU - Seghier, D.

AU - Arinbjamason, T. M.

AU - Gislason, H. P.

PY - 2005

Y1 - 2005

N2 - We report results from noise spectroscopy and deep level transient spectroscopy on silicon-doped GaAs. We observe generation-recombination noise components which originate from two deep defects. The centers are located throughout the material. A defect with an emission enregy of 0.55 eV is found to be metastable. We attribute this center to a complex defect involving EL2 generated by the presence of silicon. Further measurements are in progress to elucidate the origin of the observed traps.

AB - We report results from noise spectroscopy and deep level transient spectroscopy on silicon-doped GaAs. We observe generation-recombination noise components which originate from two deep defects. The centers are located throughout the material. A defect with an emission enregy of 0.55 eV is found to be metastable. We attribute this center to a complex defect involving EL2 generated by the presence of silicon. Further measurements are in progress to elucidate the origin of the observed traps.

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U2 - 10.1109/SIM.2005.1511426

DO - 10.1109/SIM.2005.1511426

M3 - Conference contribution

AN - SCOPUS:33746600318

SN - 078038668X

SN - 9780780386686

T3 - IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

SP - 234

EP - 237

BT - 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004

T2 - 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004

Y2 - 20 September 2004 through 25 September 2004

ER -

Deep-defect related generation-recombination noise in GaAs

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