DC and AC characterization of MgO magnetic tunnel junction sensors

Mustafa Arikan; Snorri Ingvarsson; Matthew Carter; Gang Xiao

doi:10.1109/TMAG.2013.2266327

DC and AC characterization of MgO magnetic tunnel junction sensors

Mustafa Arikan^*, Snorri Ingvarsson, Matthew Carter, Gang Xiao

^*Corresponding author for this work

Faculty of Physical Sciences

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We have fabricated multiple MgO magnetic tunnel junctions (MTJ) with 1.7 nm oxide, which are connected in series, and layed out in a serpentine geometry. We performed DC tunnel magnetoresistance measurements and AC impedance spectroscopy with crossed DC magnetic fields in the easy and hard axis directions. A simple RLC circuit model is used to fit our data and characterize the dependence on capacitance (C) and inductance (L) of magnetization orientation of the MTJ sensors. We have found in our samples that C and L are higher in antiparallel than in parallel configuration. We discuss possible reasons for the existence of this field dependence and show the evolution of magnetic field vs. capacitance curve from memory mode into sensing mode at high frequencies.

Original language	English
Article number	6525346
Pages (from-to)	5469-5474
Number of pages	6
Journal	IEEE Transactions on Magnetics
Volume	49
Issue number	11
DOIs	https://doi.org/10.1109/TMAG.2013.2266327
Publication status	Published - 2013

Other keywords

Magnetic sensors
magnetic tunnel junction
magnetocapacitance
magnetoimpedance
magnetoinductance
magnetoresistance
MgO

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10.1109/TMAG.2013.2266327

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title = "DC and AC characterization of MgO magnetic tunnel junction sensors",

abstract = "We have fabricated multiple MgO magnetic tunnel junctions (MTJ) with 1.7 nm oxide, which are connected in series, and layed out in a serpentine geometry. We performed DC tunnel magnetoresistance measurements and AC impedance spectroscopy with crossed DC magnetic fields in the easy and hard axis directions. A simple RLC circuit model is used to fit our data and characterize the dependence on capacitance (C) and inductance (L) of magnetization orientation of the MTJ sensors. We have found in our samples that C and L are higher in antiparallel than in parallel configuration. We discuss possible reasons for the existence of this field dependence and show the evolution of magnetic field vs. capacitance curve from memory mode into sensing mode at high frequencies.",

keywords = "Magnetic sensors, magnetic tunnel junction, magnetocapacitance, magnetoimpedance, magnetoinductance, magnetoresistance, MgO",

author = "Mustafa Arikan and Snorri Ingvarsson and Matthew Carter and Gang Xiao",

year = "2013",

doi = "10.1109/TMAG.2013.2266327",

language = "English",

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journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

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T1 - DC and AC characterization of MgO magnetic tunnel junction sensors

AU - Arikan, Mustafa

AU - Ingvarsson, Snorri

AU - Carter, Matthew

AU - Xiao, Gang

PY - 2013

Y1 - 2013

N2 - We have fabricated multiple MgO magnetic tunnel junctions (MTJ) with 1.7 nm oxide, which are connected in series, and layed out in a serpentine geometry. We performed DC tunnel magnetoresistance measurements and AC impedance spectroscopy with crossed DC magnetic fields in the easy and hard axis directions. A simple RLC circuit model is used to fit our data and characterize the dependence on capacitance (C) and inductance (L) of magnetization orientation of the MTJ sensors. We have found in our samples that C and L are higher in antiparallel than in parallel configuration. We discuss possible reasons for the existence of this field dependence and show the evolution of magnetic field vs. capacitance curve from memory mode into sensing mode at high frequencies.

AB - We have fabricated multiple MgO magnetic tunnel junctions (MTJ) with 1.7 nm oxide, which are connected in series, and layed out in a serpentine geometry. We performed DC tunnel magnetoresistance measurements and AC impedance spectroscopy with crossed DC magnetic fields in the easy and hard axis directions. A simple RLC circuit model is used to fit our data and characterize the dependence on capacitance (C) and inductance (L) of magnetization orientation of the MTJ sensors. We have found in our samples that C and L are higher in antiparallel than in parallel configuration. We discuss possible reasons for the existence of this field dependence and show the evolution of magnetic field vs. capacitance curve from memory mode into sensing mode at high frequencies.

KW - Magnetic sensors

KW - magnetic tunnel junction

KW - magnetocapacitance

KW - magnetoimpedance

KW - magnetoinductance

KW - magnetoresistance

KW - MgO

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DO - 10.1109/TMAG.2013.2266327

M3 - Article

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SN - 0018-9464

VL - 49

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EP - 5474

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 11

M1 - 6525346

ER -

DC and AC characterization of MgO magnetic tunnel junction sensors

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