Comparison of post-growth carrier lifetime improvement methods for 4H-SiC epilayers

I. D. Booker*, J. Hassan, A. Hallén, E. Ö Sveinbjörnsson, O. Kordina, J. P. Bergman

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

We compare two methods for post-growth improvement of bulk carrier lifetime in 4H-SiC: dry oxidations and implantations with either 12C or 14N, followed by high temperature anneals in Ar atmosphere. Application of these techniques to samples cut from the same wafer/epilayer yields 2- to 11-fold lifetime increases, with the implantation/annealing technique shown to give greater maximum lifetimes. The maximum lifetimes reached are ∼5 μs after 12C implantation at 600 °C and annealing in Ar for 180 minutes at 1500 °C. At higher annealing temperatures the lifetimes decreases, a result which differs from reports in the literature.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
EditorsRobert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
PublisherTrans Tech Publications Ltd
Pages285-288
Number of pages4
ISBN (Print)9783037854198
DOIs
Publication statusPublished - 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: 11 Sept 201116 Sept 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
Country/TerritoryUnited States
CityCleveland, OH
Period11/09/1116/09/11

Other keywords

  • Annealing
  • Carrier lifetime
  • Implantation
  • Oxidation
  • Photon counting

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