@inproceedings{8503a8332e094ca98dc0c2f96515edca,
title = "Comparison of post-growth carrier lifetime improvement methods for 4H-SiC epilayers",
abstract = "We compare two methods for post-growth improvement of bulk carrier lifetime in 4H-SiC: dry oxidations and implantations with either 12C or 14N, followed by high temperature anneals in Ar atmosphere. Application of these techniques to samples cut from the same wafer/epilayer yields 2- to 11-fold lifetime increases, with the implantation/annealing technique shown to give greater maximum lifetimes. The maximum lifetimes reached are ∼5 μs after 12C implantation at 600 °C and annealing in Ar for 180 minutes at 1500 °C. At higher annealing temperatures the lifetimes decreases, a result which differs from reports in the literature.",
keywords = "Annealing, Carrier lifetime, Implantation, Oxidation, Photon counting",
author = "Booker, {I. D.} and J. Hassan and A. Hall{\'e}n and Sveinbj{\"o}rnsson, {E. {\"O}} and O. Kordina and Bergman, {J. P.}",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.285",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "285--288",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
address = "Switzerland",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}