Bound state energy of finger gate and top gate with consideration of Rashba-Dresselhaus-Zeeman effects

Zhong Xian Zhuang, Chi Shung Tang*, Quoc Hung Phan, Nzar Rauf Abdullah, Vidar Gudmundsson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The spintronic effect of quantum transport is investigated in a fully-depleted spin transistor. The analysis considers the Zeeman effect caused by an external planar magnetic field and the electron transport characteristics induced under Rashba-Dresselhaus spin-orbit coupling. A transcendental equation is proposed for predicting the bound state energies of the conductance structure produced under the strong Rashha-Desselhaus-Zeeman effect. It is shown that the proposed equation provides an accurate means of predicting the bound state energy as a function of the potential energy and top gate length.

Original languageEnglish
Article number127447
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume407
DOIs
Publication statusPublished - 1 Aug 2021

Bibliographical note

Publisher Copyright:
© 2021 Elsevier B.V.

Other keywords

  • Bound state energy
  • Quantum transport
  • The Rashba-Dresselhaus spin-orbit effect
  • The Zeeman effect

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