BOUND EXCITON RECOMBINATION IN HIGHLY Cu-DOPED ZnTe.

B. Monemar*, P. O. Holtz, H. P. Gislason, N. Magnea, Ch Uihlein, P. L. Liu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

Most defects in semiconductors are able to bind excitons. In the case of low doping levels the bound excitons (BE:s) may be treated as non-interacting localized excitations, even though the BE wave function may be quite extended in space. A higher doping level may influence BE spectra in several ways, as discussed in this contribution. A trivial effect is that high doping usually leads to the formation of complex associates involving the dopant atoms, in addition to the simple substitutional defects dominating at low doping levels. Often a large number of such complex BE spectra are present simultaneously in optical spectra.

Original languageEnglish
Title of host publicationSpringer-Verlag
PublisherSpringer Verlag
Pages675-678
Number of pages4
ISBN (Print)0387961089, 9780387961088
DOIs
Publication statusPublished - 1985

Fingerprint

Dive into the research topics of 'BOUND EXCITON RECOMBINATION IN HIGHLY Cu-DOPED ZnTe.'. Together they form a unique fingerprint.

Cite this