Border traps in 6H-SiC metal-oxide-semiconductor capacitors investigated by the thermally-stimulated current technique

H. Ö Ólafsson*, E. Ö Sveinbjörnsson, T. E. Rudenko, I. P. Tyagulski, I. N. Osiyuk, V. S. Lysenko

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

We demonstrate the usefulness of the thermally-stimulated current (TSC) technique for investigating shallow interface state defects in silicon carbide metal-oxide-semiconductor (MOS) structures. For dry oxides, low-temperature TSC measurements reveal a high density of near-interfacial oxide traps (border traps) close to the band edges of 6H-SiC. Furthermore we find that annealing the SiC/SiO2 interface in pyrogenic steam at 950 °C (reoxidation) essentially reduces the density of deep interface states, while it increases the density of shallow states. Our results agree with observations of the appearance of a negative oxide charge in reoxidized MOS capacitors and the corresponding increase of the threshold voltage in n channel metal-oxide-semiconductor field-effect transistors.

Original languageEnglish
Pages (from-to)4034-4036
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number24
DOIs
Publication statusPublished - 10 Dec 2001

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